网络释义 1. 内建电场 内建电场,built-in electric... ... ) build-in internal electric field 内建电场 )built in electric field内建电场... www.dictall.com|基于 1 个网页
1)built-in electric field内建电场 1.The second-harmonic generation(SHG) susceptibility of a wurtzite GaN/InxGa1-xN coupling quantum well(CQW) with strong built-in electric field was theoretically investigated.理论考察了存在强内建电场的纤锌矿GaN/InxGa1-xN耦合量子阱体系的二次谐波产生(SHG)特性,...
The second-harmonic generation(SHG) susceptibility of a wurtzite GaN/InxGa1-xN coupling quantum well(CQW) with strong built-in electric field was theoretically investigated. 理论考察了存在强内建电场的纤锌矿GaN/InxGa1-xN耦合量子阱体系的二次谐波产生(SHG)特性,结果发现共振SHG系数达到了10-7m/V的...
Chen: Built-in electric field-assisted surface-amorphized nanocrystals for high-rate lithium-ion battery. Nano Lett. 13, 5289 (2013).Xia, T.; Zhang, W.; Murowchick, J.; Liu, G.; Chen, X. B. Built-in Electric Field-Assisted Surface-Amorphized Nanocrystals for High- Rate Lithium-Ion...
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In addition, the creation of a heterogeneous interface induces a built-in electric field at that interface, leading to the redistribution of charge density within the dissipative region. It is shown that the built-in electric field at the heterogeneous interface is favorable to promote electron ...
In this work, a novel concept of introducing a local built-in electric field to facilitate lithium-ion transport and storage within interstitial carbon (C-) doped nanoarchitectured Co 3 O 4 electrodes for greatly improved lithium-ion storage properties is demonstrated. The imbalanced charge ...
We report studies on electric field built in GaN/Al_{0.09}Ga_{0.91}N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visibl...
【单选题】In a p-n junction, the direction of the built-in electric field is fromA. n to p, and the electricfield is uniform within the junction.B. p to n, andthe electricfield is uniform within the 相关知识点: 试题来源: 解析 ntop,and the electricfield is non-uniform within the ...
A model of ferroelectric switching in thin films which also exhibit semiconducting properties is presented. The two principle assumptions upon which the model is based are (1) that the threshold field for reverse domain nucleation, Ecm, is much greater than the field required for domain wall motio...