这不是一个永久的解决方案——扩展将继续,也需要铜替代品——但BSPDN提供了缓解。 与高性能设计上类似的frontside-only process相比,BSPDN总共在功耗方面提高了大约15-20%。 有三种不同的方法正在探索和/或实施用于背面电源传输:埋地电源轨、电源通孔和背面接触。 来源:应用材料公司 埋地电源轨 埋地电源轨(BPR)是...
DTCO Guided Process Integration: Case Studies From FEOL & BEOL with BSPDN Topic: DTCO/DFM 来自 IEEEXplore 喜欢 0 阅读量: 15 作者:M Abedin,S Khan,N Lanzillo,D Dan 摘要: We present two case studies where Design Technology Co-Optimization (DTCO) methodology can aid in down-selection...
三星还将在其路线图中增加(或更确切地说是重新命名)另一个 2nm 级节点 SF2,此前三星将其披露为 SF3P,旨在打造高性能设备。Samsung this week has unveiled its latest process technologies roadmap at the company's Samsung Foundry Forum (SFF) U.S. The new plan covers the evolution of Samsung。 20...
MANUFACTURING PROCESSFAQ 1. Can I have a sample order for valve? A: Yes, we welcome sample order to test and check quality. Mixed samples are acceptable. 2. Do you have any MOQ limit for valve order? A: Low MOQ, 1pc for sample checking is available. 3. How do you ...
ESG(Qingdao elite ) was founded in 2001, we specialize in designing and producing stainless-steel process valves for middle & low-pressure industrial fluid control system. Our products mainly include pneumatic angle seat valves, shuttle valves, diaphragm valves, butterfly valv...
'Semiconductor Device With Early Buried Power Rail (Bpr) And Backside Power Distribution Network (Bspdn)' in Patent Application Approval Process (USPTO 20230132353) 来自 国家科技图书文献中心 喜欢 0 阅读量: 13 摘要: The following quote was obtained by the news editors from the background ...