This article describes the exploitation of monolithic, laterally integrated, high-voltage, gallium nitride (GaN) technology to create high-efficiency, high-performance, half-bridge GaN power integrated circuits (ICs), and it shows practical achievements in application efficiency, simultaneously with ...
LT8418ACBZ-R7栅极驱动器 100V HALF-BRIDGE GaN DRIVER Analog Devices Inc. LT8418半桥GaN驱动器 - TI | 贸泽 Analog Devices Inc. LT8418半桥GaN驱动器是一款100V器件,集成了顶部和底部驱动器级、驱动器逻辑控制和保护功能。该驱动器可配置为同步半桥、全桥拓扑或降压、升压和降压-升压拓扑。LT8418具有强大的...
Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge configuration in an easy-to-design quad flat no-...
Figure 2: Integration is the key to small size, low cost. a) Multiple technologies: Hybrid isolator/driver with discrete powertrain, b) Homogeneous platform: Lateral GaN-on-Si, NV6250 Half-Bridge GaN Power IC. (Images are representative of technology, not specific die, not to scale). As m...
introduction of an 80V, 12.5A ePower™ stage integrated circuit designed for 48V dc-dc conversion used in high-density computing applications and in motor drives for e-mobility. The EPC2152 is a single-chip driver plus eGaN® FET half-bridge power stage using EPC's proprietary GaN ...
Navitas’ proprietary AllGaN half-bridge GaN Power IC with iDrive™ monolithically integrates all the functions required to deliver switching speeds of up to 2 MHz and enable a dramatic reduction in size, cost and weight while delivering faster charging. Previously, older silicon-based half-bridge...
TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP SNOSDE3C – JULY 2023 – REVISED APRIL 2024 TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of ...
80-V half-bridge FET module offers drop-in GaN evaluation.The article offers brief information on the 80-voltage (V) half bridge field-effect transistor (FET) module which offers drop-in gallium nitride (GaN) evaluation from Texas Instruments Inc....
Process for the preparation of methylen-bridged hetero compounds and novel bis (diorganylphosphino) methanesBis(dimenthylphosphino)methane (IA), (dimenthylphosphino)(diphenylphosphino)methane (IB) and (dimenthylphosphino)(di-tert.-butylphosphino)methane (IC) are claimed. Also claimed is a method ...
Normally-offABMMicromachinedIn this work, a micromachined P-GaN power high electron mobility transistor (HEMT) on Si substrate with new air-bridged matrix design was demonstrated. After removal of the Si substrate beneath the P-GaN HEMT, a significant breakdown voltage improvement was observed. ...