MOSFET Section S RDS_ON Static Drain-source On-resistance ID=200mA 300 mΩ ILIM Current Limit 3 A P BVDSS Drain-Source Breakdown Voltage VGS=0V/IDS=10uA 80 V Thermal Regulation Section B TREG Thermal Regulation Temperature 140 Note 3: production testing of the chip is performed at 25°C...