TAKAGIH.Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method[J].Sensors and Actuators.1998,A70:164-170.Takagi, H., Maeda, R., Chung, T. R. and Suga, T., Low-temperature direct bonding of silicon and silicon dioxide by the surface activation ...
In this paper a silicon wafer-to-wafer bonding process is presented where silicon dioxide is used as an intermediate layer. Because the process temperature is very low (120 °C) and because the chemical treatment of the surface before bonding does not damage aluminium patterns, wafers containing...
Deep-level centers in a split-off silicon layer and trap levels were studied by deep-level transient spectroscopy both at the Si/SiO2 interface ... Black,Robert,D.,... - 《Mrs Proc》 被引量: 5发表: 1987年 Silicon and Silicon Dioxide Thermal Bonding The quality of the bond produced afte...
placing the bonding adjacent layers next to each other and heating in an oxidizing atmosphere to form an oxide bond therebetween. A layer of silicon dioxide may be formed on the first and second ceramic parts prior to bonding first and second ceramic parts. Reisman's bonding technique is used...
The impact of Ar, Kr ... M Danner,B Rebhan,P Kerepesi,... - IOP Publishing Ltd 被引量: 0发表: 2023年 Novel room-temperature fluorine containing plasma activated bonding and its improvements Moreover, it does work well for bonding of silicon and silicon dioxide wafers at room temperature ...
SILICON DIOXIDE BONDING LAYERS AND METHOD 专利名称：SILICON DIOXIDE BONDING LAYERS AND METHOD 发明人：STERLING, RODNEY, D.,LEE, YU-TAI 申请号：EP95901053 申请日：19941026 公开号：EP0728324A4 公开日：19961218 专利内容由知识产权出版社提供 摘要：A liquid crystal light valve that has an indium tin ...
2, the dielectric layer 108, when made of silicon dioxide for example, has a coefficient of thermal expansion (CTE) of approximately 0.55×10−6/° C. and a hardness of 7 Mohs. In some implementations, other materials may be used for the dielectric 108. A suitable dielectric 108 may ...
The diffusion of silicon from the die was found to be important in the development of the bond. Adhesion between the silver glass and the silicon die was found to be achieved via a glass network structure that starts at the silicon dioxide film on the die back side. Bonding between silver...
The diffusion of silicon from the die was found to be important in the development of the bond. Adhesion between the silver glass and the silicon die was found to be achieved via a glass network structure that starts at the silicon dioxide film on the die back side. Bonding between silver...
The method involves forming cavities (3) between silicon wafers (1, 2). The wafers are arranged on each other at a boundary surface (4) and are connected together by a high temperature process. A silicon dioxide layer (5) is produced at surfaces of the cavities. A wringing process of th...