A body diode is a parasitic diode formed between a source and drain due to MOSFET structure. The following characteristics are described on the datasheet. Drain Reverse Current (Continuous)/Drain Reverse Current (Pulse) IDR/IDRP: MOSFET Body Diode Forward Current...
Diode forward voltage VSD 1.4 V IS=80 A, VGS=0 V Reverse recovery time trr 186.6 ns IS=40 A,di/dt=100 A/μs Reverse recovery charge Qrr 1.6 μC Peak reverse recovery current Irrm 15.4 A Note Calculated continuous current based on maxi...
600 - 2.0 - - - - - - - - - - - - - - - - - - 0.2 Continuous source-drain diode current Pulsed diode forward current IS MOSFET symbol showing the integral reverse ISM p - n junction diode D G S - - Diode forward voltage VSD TJ = 25 °C, IS = 11 A, VGS = ...
TYP. 600 - - 0.63 3- -- -- -- -- - 0.059 -9 - 2628 - 122 -7 - 87 - 543 - 51 - 19 - 16 - 27 - 55 - 53 - 35 0.3 0.7 Continuous source-drain diode current Pulsed diode forward current IS MOSFET symbol showing the D -- integral reverse G ISM p - n junction diode ...
Continuous Forward CurrentIF20mAIF=20mA 50mAIF=50mA Pulsed Forward Current(1/10 Duty Cycle 0.1ms Pulse Width)IFP80mAIF=50mA Reverse VoltageVR5V-- Electrostatic Discharge(HBM)ESD2000V-- Operating Temperature RangeTopr / Tstg-30 to+80ºC-- ...
Continuous Forward CurrentIF20mAIF=20mA 50mAIF=50mA Pulsed Forward Current(1/10 Duty Cycle 0.1ms Pulse Width)IFP80mAIF=50mA Reverse VoltageVR5V-- Electrostatic Discharge(HBM)ESD2000V-- Operating Temperature RangeTopr / Tstg-30 to+80ºC-- ...
These effects were observed independently of the specific pressure being considered and independently of the mode of operation, being it continuous or pulsed. This distinction about the impact of different frequencies in terms of human perception drives the choice related to transducer hardware design ...
DRAIN ■ Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Drain-Source Voltage 漏極-源極電壓 Gate- Source Voltage 栅極-源極電壓 Drain Current (continuous) 漏極電流-連續 Symbol 符號 BVDSS VGS ID Drain Current (pulsed) 漏極電流-脉冲 Total Device Dissipation 總耗散功率 TA...
(th) 1.5 — 3 Diode Forward Voltage Drop 内附二極管正向壓降(IS= 1.25A,VGS=0V) VSD —— 1.2 Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 30V) IDSS —— 1 Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance 静态漏源導通電阻(ID...
The bottom of insulating layer 26 may reside inside the buried region 22 allowing buried region 22 to be continuous as shown in FIGS. 1 and 2. Alternatively, the bottom of insulating layer 26 may reside below the buried region 22 as in FIGS. 3A and 3B (shown better in FIG. 3A). ...