FET:输入阻抗极高(兆欧以上),MOS管更高,栅极几乎没有电流,对前级电路影响较小,输出电阻同样也很高 载流子: BJT:两种载流子--少子和多子,属于双极性器件 Bipolar Transistor. FET:一种载流子--多子,属于单极性器件,要么是空穴要么是自由电子导电。 稳定性(噪声): BJT:噪声更大--因为少子参与了导电,而少子容易受...
对BJT来说，饱和指的是载流子浓度，处于饱和区时，BJT的EB结和CB结均为正向状态，由于E/C的注入效率...
A bipolar junction transistor is formed when two p-n junctions of specific widths are developed back-to-back on a single intrinsic crystal. In a BJT both the minority and the majority carriers play an important role, however, the operation of a FET is governed by carriers of only one kind...
BJT放大器和FET放大器 热度: 模拟电子技术(原书第11版)(英文版)ch9 BJT and FET Frequency Response 热度: BJT和FET的区别与联系 热度: 相关推荐 1 ELE1110B&C Tutorial9 BJTvsMOSFET 2 BipolarJunctionTransistor(BJT) Threeterminals:Emitter,Base,andCollector Theactiveregion: Symbols: 3 Important...
When no voltage is applied to the gate of an enhancement FET the transistor is in the “OFF” state similar to an “open switch”. The depletion FET is inherently conductive and in the “ON” state when no voltage is applied to the gate similar to a “closed switch”. FET’s have mu...
IGFET: Insulated-Gate Field Effect Transistor 绝缘栅型场效应管 MOSFET 是其中的一种... BJT VS FET JFET VS MOSFET
异质结双极型晶体管(Heterojunction Bipolar Transistor),简称HBT,是在双极型晶体管(BJT)的基础上改进得到的,不同于平面型的硅基器件,是立体结构器件。 NPN型BJT正常工作时,BE结正偏,BC结反偏,此时,电子在电场的作用下,从发射极进入基极。 由于集电极电压远大于发射极电压,在强电场的作用下,电子会直接被收集到集...
BJT Vs FET FET or the field Effect Transistor is another type of transistor we use. If you wonder what is the difference between a BJT and the FET, BJT is a bipolar device, while FET is a unipolar device. BJTs are current-controlled, relying on the flow of charge carriers (electrons ...
双极结型晶体管(Bipolar Junction Transistor—BJT)又称为半导体三极管,它是通过一定的工艺将两个PN...只有一种极性载流子参加导电的晶体管又称单极型晶体管。与双极型晶体管相比,场效应晶体管具有输入阻抗高、噪声小、极限频率高、功耗小,制造工艺简单、温度特性好等特点,广泛应用于各种放大电路、数字电路和微波电路...
Besides evaluating these key parameters, you should also consider both the reactive and fault behaviors of your load when reviewing and comparing power transistor datasheets. For example, IGBTs may latch up (like a thyristor) if subjected to a short-circuit current exceedin...