A JFET-BJT combination is described which exhibits FET-like characteristics with much improvement in thermal stability, frequency response and transfer curve linearity over a wide dynamic range. The input resistance of the combination is, however, equal to that of the JFET with the exception that ...
The MOSFET – Metal Oxide FET As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying channel and is therefore called an Insulated Gate Field Effect Transistor or IG...
基于Silvaco TCAD的4H-SiC功率BJT器件仿真 [摘要]碳化硅(SiC)作为第三代半导体材料的代表,由于具有宽禁带、高击穿电场、高热导率等优异特性,使其在高温、大功率、高频、抗辐射等领域应用前景广阔,其研究广为关注。在商用的SiC材料中,4H- SiC具有更高的体迁移率和更低的各向异性,使其更具优势。大功率4H-SiC BJT...
lowblockingvoltage,lowcurrentgain,lowfrequencyresponseandweakreliabilityof 4H-SiCBJTrestrictitsapplicationinpowersystem.Firstly,thephysicsmodelsofnew materialsinsimulatorSilvaco-TCADwereimprovedinthepaper,includingmobilitymodel, band-gapnarrowingmodel,dopingincompleteionizationmodel,impactionizationmodel, ...
Common Source JFET amplifiersTwo distinct configurations of small-signal amplifiers, consisting hybrid combination of BJT-FET-BJT in Triple Darlington topology, are proposed and qualitatively analyzed perhaps for the first time. The first proposed amplifier crops high voltage with moderate current gain ...
2.3MVlcm.Atthesametime,thenovelstructureiswithlowerpowerlossandreverse leakagecurrent,canbeappliedbetterinhighpowersystem.Finally,thefrequency responseandpowerlossarediscussedindetailaccordingtophysicsanalysis. Keywords:4H-SiCPowerBlTDevicePhysicsSilvaco-TCAD ...
The input impedance of the MOSFET is even higher than that of the JFET due to the insulating oxide layer and therefore static electricity can easily damage MOSFET devices so care needs to be taken when handling them. When no voltage is applied to the gate of an enhancement FET the transistor...
大功率4H-SiC BJT是非常具有竞争力的器件种类,可以广泛应用于诸如航空航天、机车牵引、高压直流输电设备、混合动力车辆等国计民生的重要领域。然而,4H-SiC BJT较低的击穿电压、低的共发射极电流增益、较低的频率响应以及较差的可靠性限制了其在功率系统领域的发展,也使得在这一方面的研究成为热点。本文首先完善了...