PUMD2 115 TRANS PREBIAS NPN/PNP 晶体管 - 双极 BJT - 阵列 - 预偏置 1 个 NPN 1 个 PNP - 预偏压式 双 50V 100mA - 300mW 表面贴装 更新时间:2023年08月11日 价格 ￥0.50 ￥0.40 ￥0.30 起订量 1个起批 100个起批 1000个起批 货源所属商家已经过真实性核验 发货地 广东省 深圳市...
Transtion Frequency(fT)250MHz 直流电流增益hFE DC Current Gain(hFE)100 管压降VCE(sat) Collector-Emitter SaturationVoltage-100mV/-0.1V 耗散功率Pc PoWer Dissipation200mW/0.2W Description & ApplicationsPNP/NPN Epitaxial planar applications: switching circuit, inverter circuit,interface circuit,driver circuit...
2SA1678 PNP transistors(BJT) -50V -100mA/-0.1A 250MHz 50 -100mV/-0.1V SOT-323/MCP marking EL bias resistorInventory:32300 Min Order:10 ParametersRelated model ×Parameters: Model:2SA1678 Manufacturer:HUABAN Date Code:05+ 05+ Standard Package:3000 Min Order:10 Mark/silk print/code/type...
2SA1294 : TRANSISTOR, BJT, PNP, -230V, -15A, MT-100 (TO3P) Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: -230V ; Transition Frequency Typ ft: 35MHz ; DC Collector Current: -15A ; Power Dissipation Pd: 130W ; DC Current Gain hFE: 50 ; Operating ...
Circuit Realization of pnp BJT in CMOS Technology Vth Referenced CMOS Self-Bias Circuit Thermal Voltage Referenced CMOS Self-Bias Circuit Thermal Voltage Referenced CMOS Self-Bias Circuit CMOS Band gap Reference (cont’d) CMOS Band gap Reference Actual Implementation of CMOS Band gap Reference Design...
HowdowefabricateBJTinCMOSProcessTechnology? *TemperatureSensitivity~-4000ppm/C RealizationofpnpBJTinCMOSTechnology VthReferencedCMOSSelf-BiasCircuit ThermalVoltageReferencedCMOSSelf-BiasCircuit ThermalVoltageReferencedCMOSSelf-BiasCircuit *Temp.Sensitivity~+3300ppm/C ...
2SA1722 PNP transistors(BJT) -50V -100mA/-0.1A 250MHz 50 -100mV/-0.1V SOT-323/MCP marking HL bias resistor Inventory:6000Min Order:10 Parameters Related model
2SA1344 PNP transistors(BJT) -50V -100mA/-0.1A 250MHz 50 -100mV/-0.1V SOT-23/CP marking EL switch/bias resistorModel:2SA1344 Mark / screen / code / typing:EL Manufacturer: Date Code:05+ 05+ Package:SOT-23/CP Standard Package:3000 Min Order:10...
of bipolar junction transistors (BJT) Q1and Q2. The first transistor Q1has a base electrode for serving as a first input terminal INa of the differential input stage10while the second transistor Q2has a base electrode for serving as a second input terminal INb of the differential input stage...
, gallium arsenide, silicon over insulator, or silicon germanium. One or more devices may also be fabricated using nanotechnology. Furthermore, the particular type of BJT shown is an npn-type device. However, it is understood that with the necessary changes, the circuitry may also use pnp-...