Discrete power MOSFETs employ semiconductor processing techniques that are Source Contact Field Gate Gate Drain Oxide Oxide Metallization Contact similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI ...
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Discrete power MOSFETs employ semiconductor processing techniques that are Source Contact Field Gate Gate Drain Oxide Oxide Metallization Contact similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI ...
Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI devices. The metal oxide semiconductor field effect transistor (MOSFET) ...
Discrete power MOSFETs employ semiconductor processing techniques that are Source Contact Field Gate Gate Drain Oxide Oxide Metallization Contact similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI ...