pn结势垒(ban加油rrierofp-njunction) pn结的空间电荷区中,存在由n边指n加油向p边的自建电场。因此,自然形成n区高于n加油p区的电势差Vd。相应的电子势能之差即能带的弯曲量qVd称为pn加油n结的势垒高度。pn结的p区和n区的多数载流子运动时n加油必须越过势垒才能到达对方区域,载流子的能量n加油低于势垒高度,就被势垒...
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PN JUNCTION DIFFUSION BARRIERPURPOSE: To form a PN junction of diffusion barrier added with impurities by adding impurities having a relatively small diffusion coefficient to a third semiconductor layer in order to form a diffusion barrier between first and second conductor layers.BAYRAKTAROGLU BURHAN...
aPN结势垒电容的测量,TTL直流门电路的性能测试 PN ties the potential barrier electric capacity the survey, the TTL cocurrent gate performance test[translate]
A merged PN/Schottky diode is provided having a substrate of a first conductivity type and a grid of doped wells of the second conductivity type embedded in the substrate. A Schottky barrier metal layer makes a Schottky barrier contact with the surface of the substrate above the grid. Selected...
The stress relaxation calculated from Raman measurements is found to be in agree- ment with results of photoluminescence (PL) measurements. Also, PL intensity of near band-edge (NBE) lumi- nescence is enhanced in the case of NRs which suggests that these NR arrays may have potential ...
if two metals are brought in contact, they will exchange electrons, and the resulting barrier height can be estimated as the difference between the work functions of the first and the second materials, that is,ϕ1−ϕ2, called the contact potential difference Examples are shown inFig. B8...
Diodes are commonly used in a variety of circuits for rectification and protection. This report studies the Schottky Barrier Diodes (SBDs). A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, sem...
J. H. Werner, "Schottky barrier and pn-junction I/v plots - small signal evaluation", Applied physics A, 47, 291-300, 1988.Werner JH. Schottky barrier and pn-junction I/V plots - small signal evaluation. Appl Phys A: Solids Surf 1988;47(3):291-300. http://dx.doi.org/ 10.1007/...
Moustakis, "Doping Schottky barrier and p-n junction formation in amorphous germanium and silicon by rf sputtering", Solid State Comm., 20, 1976, 969.W. Pual, A. J. Lewis, G. A. N. Connel and T. D. Moustakas, ”Doping, Schottky barrier and p-n junction formation in amorphous ...