A JBS diode includes a silicon substrate, a first P doped region, a metal layer, a second P doped region, and a first N doped region. The silicon substrate includes an upper surface. An NBL is provided in the bottom of the silicon substrate. An N well is provided between the upper ...
The decrease in resistance of TiO2 coated CeO2 nanorods compared to CeO2 nanorods confirmed the formation of the accumulation layer, increasing the conduction channel. Chen et al. [52] suggested an increase in potential barrier height at the heterojunction interface when TiO2 coated CeO2 C-S ...
The silicon carbide junction barrier Schottky diode device with trapezoid terminals are in a symmetrical structure and comprises an N+ type substrate, wherein an N type transitional epitaxial layer is arranged on the N+ type substrate, an N- type epitaxial layer is arranged on the N type ...
2.1Barrier Height, Interface States, Junction Formation, and Equilibrium Properties ASchottky barrieris similar to apnjunction orheterojunctionin which the doping on one side increases to the point where it becomes metallic. Theband diagramof an ideal metal onn-type semiconductor Schottky barrier is sh...
Diodes are commonly used in a variety of circuits for rectification and protection. This report studies the Schottky Barrier Diodes (SBDs). A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, sem...
1.A Schottky diode comprising:a first semiconductor layer of a first conductivity type forming a drift region, said drift region having a first surface and a second surface;at least one doped well within a conductive channel in said drift region and adjacent said first surface, said doped well...
inventor's summary information for this patent: "Problems to be Solved by the Invention "However, even when such a circuit structure in which the Schottky barrier diode is connected in parallel thereto is employed, a phenomenon in which an electric current flows through a PN junction diode has...
A merged PN/Schottky diode is provided having a substrate of a first conductivity type and a grid of doped wells of the second conductivity type embedded in the substrate. A Schottky barrier metal layer makes a Schottky barrier contact with the surface of the substrate above the grid. Selected...
专利名称：Junction Barrier Schottky Diode with Dual Silicides and Method of Manufacture 发明人：Dev Alok Girdhar,Michael David Church,Alexander Kalnitsky 申请号：US11849565 申请日：20070904 公开号：US20080296721A1 公开日：20081204 专利内容由知识产权出版社提供 专利附图：摘要：An integrated circuit, ...
United States Patent US7829970 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text