The circuit generates a sub-bandgap voltage of silicon. The sub-BGR is fabricated with 65-nm standard CMOS process with an area of 400 mu m x 80 mu m. Experimental results demonstrate that this sub-BGR circuit can generate a 202.8 mV reference voltage with a power consumption of 68 nW....
implementation,activesolid-statedevicescanachieveatempcoof1-4 ppm/°Cifappropriatecompensationtechniqueisemployed Note Tominimizeerrorduetoself-heating,voltagereferenceusually operateswithmodestcurrent(e.g.<1mA) Tempco=temperaturecoefficient,usuallyexpressedinppm/°C(parts ...
(1.38x10-23J/°K) & T = Absolute temperature npo = ni2/NA = equilibrium concentration of electrons in the base ?-VGO? 2 3 ni = DT exp? V ? = intrinsic concentration of carriers t ? ? Vt = kT/q D = temperature independent constant VGO = bandgap voltage of silicon (1.205V) NA...
The resulting value of Vref will be near the bandgap voltage of silicon at 0° K., thus the name “bandgap circuit.” However, Vbe for a bipolar transistor operating at constant current has a slight bow over temperature. The net result is that a plot of bandgap voltage Vref against ...
申请(专利权)人: SILICON GENERAL, INC. 发明人: D Yum 被引量: 98 摘要: A voltage reference circuit employs a bandgap cell to establish a voltage reference, stabilized relative to the bandgap voltage of silicon, and a compensation circuit for compensating non-linear temperature dependence of ...
where T0 is the reference temperature, Vg0 is the bandgap voltage of silicon at T0 and is 1.205 V at absolute temperature 0°, the temperature coefficient γ is approximately equal to 3, and JC is collector current density of PNP. The relationship between JC and temperature can be expressed...
Silicon carbide (SiC) has an energy bandgap of 3 electronvolt (eV) and a much higher thermal conductivity compared to silicon (Si). SiC-based MOSFETs are best suited for high-voltage and high-power applications since they combine high power density and higher switching performance with respect ...
looking for next generation of efficient power converter switches. However, each material offers certain advantages over the other. For instance, silicon carbide power semiconductors offer excellent voltage blocking for applications starting at 650V and provides even more benefits the higher the voltage....
When compared to legacy silicon these factors translate into a number of benefits including smaller, faster, more efficient and more reliable operation. Higher voltage capabilities open up opportunities in higher power designs while dramatically improved efficiencies enable the same performance in smaller ...
where VGOis the extrapolated bandgap voltage of silicon at 0° K., Trindicates the room temperature (quantified by ° K.), T is the absolute temperature in degrees Kelvin, η is a temperature-independent and process-dependent constant, and its ranging is less than 4 depending on doping level...