The electronic band structure of bilayer graphene is studied systematically in the presence of substitutional B and/or N doping, using density functional theory with van der Waals correction. We show that introduction of B-N pairs into bilayer graphene can be used to create a substantial band ...
Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the band structure, featuring two distinct regimes. One is a tunable band gap induced by large displacement fields. Another is a gapless metallic band occurring at low fields, featuring rich fine structure consisting of four...
Band structureA perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the ...
Band structure with LCAO Monolayer Linear combination of atomic orbitals(LCAO)可以用作近似来计算能带结构。我们用它来考虑二维石墨烯的能带。 石墨烯中,碳原子有 4 个价电子,其中 3 个用于形成 sp2键,剩余的一个电子的 π键是我们关心的。单个 unit-cell 中有两个电子,因此有两个 π键,分别称为 π和π...
Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number direction is found in the beta structure. The local ...
PHYSICAL CHEMISTRY CHEMICAL PHYSICS -CAMBRIDGE- ROYAL SOCIETY OF CHEMISTRYX.DaiY.HanS.HuangB.Graphene/g-C3N4 bilayer:considerable band gap opening and effective band structure engineering. X. Li,Y. Dai,Y. Ma,S. Han,B. Huang. Physical Chemistry Chemical Physics . 2014...
Asymmetry gap in the electronic band structure of bilayer graphene. Phys. Rev. B 74, 161403(R) (2006). 19. Oostinga, J. B., Heersche, H. B., Liu, X., Morpurgo, A. F. & Vandersypen, L. M. K. Gate-induced insulating state in bilayer graphene devices. Nature Mater. 7, 151...
Multiple sub-band transport in bilayer graphene nanoribbons (GNRs) with localized charge states has not been experimentally investigated owing to the difficulty of accessing into the upper sub-band. In this letter, we utilize current annealing to heavily p-dope graphene from a capping hydrogen-silses...
In bilayer graphene, when the trigonal warping effect is taken into account, this new Rabi frequency shows a zero non-trivial minimum as a function of the strength of the applied electric field in addition to the trivial minimum at zero field. The zero non-trivial minimum occurs where the '...
Journal of Solid State Electrochemistry (2024) 28:829–845 https://doi.org/10.1007/s10008-023-05770-w REVIEW PAPER Electrochemistry and band structure of semiconductors (TiO2, SnO2, ZnO): Avoiding pitfalls and textbook errors Ladislav Kavan1 Received: 9 November 2023 / ...