Nitrogen doped TiO_2 has been synthesized by the oxidation of pulsed laser deposition (PLD) prepared titanium nitride (TiN) thin films. The oxidation of TiN was performed at 800 °C in ambient air. The phase transformation of TiN to TiO_2 appears to be a function of annealing time. X-...
The substitutional doping of N into the TiO2 lattice is found to be effective; its 2p states contribute to the band-gap narrowing by mixing with O 2p as shown in ab initio electronic structure calculations.DOI: 10.1143/JJAP.40.L561 被引量: 392 ...
This work shows the study of the optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage ...
Band gap narrowing and the band structure of tin-doped indium oxide films Films of tin-doped In 2O 3 were prepared by r.f. reactive sputtering using a metallic alloy target (In Sn, 80-20). The annealing of films in different amb... L Gupta,A Mansingh,PK Srivastava - 《Thin Solid ...
www.nature.com/scientificreports OPEN received: 29 May 2015 accepted: 28 September 2015 Published: 11 December 2015 Time-resolved observation of band- gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide Beata Ziaja1,2, Nikita Medvedev1, Victor Tkachenko1, ...
Titanium nitride (TiN) and aluminum-doped zinc oxide (AZO) high-aspect trench structures are fabricated using a combination of deep reactive ion etching an... E Shkondin,T Repan,R Malureanu,... 被引量: 0发表: 2018年 加载更多来源期刊 Aip Advances 研究点推荐 Mid-IR band gap engineering...
The embedded resistor is configured to maintain a substantially constant resistance throughout fabrication and operation of the cell, such as annealing the cell and subjecting the cell to forming and switching signals. The stoichiometric nitride may be one of hafnium nitride, zirconium nitride, or ...
In the renewable industry, pressure-dependent CsPbBr3 perovskite has a lot of potential due to its exceptional properties. Present work revealed the mechanical stability of CsPbBr3 between 0 to 50 GPa. The bandgap of unstressed CsPbBr3 is 2.90 eV, indicating a direct bandgap. Band gap values de...
18 (d). It shows that increasing the quantity of graphene gradually decreased the band gap of TiO2 up to 2.96 eV. Although, band gap of 10% rGO/TiO2 reduced to 2.66 eV, but the activity started to decrease above 0.5% rGO. This was obviously due to shielding effect of graphene, which...
12.9.4 Sensitization of TiO2 Nanomaterials by Narrow Band Gap Semiconductors Narrow band gap semiconductors with appropriate band structure can play a similar photosensitizing role as organic dyes when they are coupled with TiO2 [84–86]. If the optical absorbance of narrow band gap semiconductors ca...