Band edgeWater splittingPhotocatalysisIt is well known that both the band gap and the band edge positions of oxide semiconductors are important for the photocatalytic water splitting. In this study, we show that
where XM and XN are the absolute electronegativities of the atoms M and N, respectively; Ec is the free electron energy on the hydrogen scale (about 4.5eV); Eg is the band gap of semiconductors; The conduction band edge of a semiconductor at the point of zero charges (pHzpc) can be ...
band-edge profiles comprise band bending within each layer and band offsets at the junctions of these layers. For well-understood and well-characterized semiconductor interfaces, such as those consisting of Group III–V semiconductors, potential...
Deak P, Kullgren J, Aradi B, Frauenheim T, Kavan L (2016) Water splitting and the band edge positions of T iO2. Electrochim Acta 199:27–34 23. Zlamalova M, Mansfeldova V, Tarabkova H, Krysova H, Kavan L (2023) Variable work function of semiconducting thin-film oxide ...
The hole localization effects in rubrene single crystal are basically quenched as 110 K, where the band dispersion near the HOMO edge positions are well described by theoretical calculations (Fig.3b). This result is consistent to the recovery of band transport limit and the increase of the int...
Because of this advantage, the band edges of heterostructures combined with 2D vdW metals and semiconductors have been investigated with and without electrostatic gating for device applications. Several theoretical studies have shown the electrostatic gating effect on the band edges of nonmagnetic 2D vdW...
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According to the nature of semiconductors, the EF of an n-type semiconductor is generally close to the CB, and that of the p-type semiconductor is close to the VB with a difference of 0.1 or 0.2 V [56]. Thus, after calculating the EF using Eqs. (1) and (2), we can simply ...
1. A non-volatile storage system, comprising: a three dimensional memory array of memory cells; a plurality of word lines coupled to the memory cells; a plurality of global bit lines; a plurality of vertically oriented bit lines coupled to the memory cells; and a plurality of vertically orie...
A spectroscopy system is provided which is optimized for operation in the VUV region and capable of performing well in the DUV-NIR region. Additionally, the system incorporates an o