The band alignment was analyzed after each growth step. The SiO2/HfO2 interface valence band offset is found to be 0.7eV, and the HfO2/VO2 interface valence band offset is determined to be 3.4eV. 展开 关键词: X-ray photoelectron spectroscopy Oxidation Plasma deposition Valence bands ...
Band bending and band alignment at HfO 2/SiO 2/Si and HfO 2/Hf/SiO 2/Si interfaces were investigated using X-ray photoelectron spectroscopy. After Hf鈥搈etal pre-deposition, a 0.55 eV band bending in Si and a 1.80 eV binding energy decrease for Hf 4f and O 1s of HfO 2 were ...
Change in crystalline structure and band alignment in atomic‐layer‐deposited HfO2 on InP using an annealing treatment Changes in structural characteristics and band alignments of atomic-layer-deposited HfO2 films on InP (001) as a function of annealing temperature and film... YS Kang,DK Kim,MH...
SiO2 3.1 Alay (1999) Ta2O5 0.35 0.3 Miyazaki (2001) SrTiO3 0.4 0 Chambers (2000) ZrO2 1.6 1.42.01.4 Miyazaki (2001)Afanasev (2002)Rayner (2002) HfO2 1.3 1.32.0 Sayan (2002)Afansev (2002) Al2O3 2.4 2.82.2* Ludeke (2000)Afansev (2007) a-LaAlO3 1.0 1.8 Edge (2004) La2O3...
The band alignment of HfO2 film on p-type (100) InP substrate grown by magnetron sputtering was investigated. The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy (XPS). The results show that there is no existence of Hf–P or Hf–...
The band alignment was analyzed after each growth step. The SiO2/HfO2 interface valence band offset is found to be 0.7eV, and the HfO2/VO2 interface valence band offset is determined to be 3.4eV. 展开 DOI: 10.1116/1.4832341 年份: 2014 ...
Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks Bartynski R A, Vanderbilt D, Suehle J S, Suzer S and Banaszak-Holl M 2004 Band alignment issues related to HfO2SiO2p-Si gate stacks J. Ap... S. Sayan,T. Emge,E. Garfunkel,... - 《Journal of Applied Physics》...
HfO2/SiC heterojunctionsPEALDIn situ NH3-plasma passivationThin filmsDielectricsThe efficient passivation of in situ NH3-plasma pre-treatment and its regulation of the band alignment between HfO2 and 4H-SiC have been investigated by XPS. With in situ NH3-plasma passivation by PEALD, a VBO of ...
Mahapatra, R., Chakraborty, Amit. K., Horsfall, A. B., Wright, N. G., Beamson, G., & Coleman, Karl. S. (2008). Energy-band alignment of HfO2 /SiO2 /SiC gate dielectric stack, . Applied physics Letter, , 92, 042904.R. Mahapatra, A. K. Chakraborty, A. B. Horsfall, N. G...
Theoretical study of the insulator/insulator interface: Band alignment at the SiO2/HfO2 junction Hafnia has emerged as a front runner for replacing silica as a gate oxide in CMOS technology. One of the problems which still remains outstanding is findin... O Sharia,AA Demkov,G Bersuker,......