PURPOSE:To improve the planar uniformity of a diffused emitter layer, and to enhance the emitter efficiency by composing the emitter of a metallic silicide film, a diffused layer formed under the metallic silicide film and a silicon oxide layer formed in a boundary region between metallic silicide...
Heterojunction baipo - ra transistor and its production manner CONSTITUTION:A collector layer 12 is formed on a semiinsulating semiconductor substrate 11; a thick external base layer 17 is laminated on the collector ... 羽山 信幸,モハマッドマディヒアン 被引量: 0发表: 1996年 Heterojunction ...
Heterojunction Baipo - La transistor and the integrated way PURPOSE:To obtain a heterojunction bipolar transistor capable of both modes operation of an emitter top type and a collector top type and of low consumptio... N Atsushi 被引量: 0发表: 1996年 Heterojunction baipo - ra semiconductor eq...
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baipo - ra forma thin film semiconductor equipmentPURPOSE:To prevent decrease of current amplification factor hFE for improving characteristics of a transistor by connecting an emitter region and a base lead- out region to a base region directly under a mask while isolating the emitter region from...
PURPOSE: To form a heterojunction bipolar transistor wherein all of the band gap differences are generated in one energy band, and other energy bands are practically matched, by constituting the respective semiconductors of a collector layer, a base layer, an emitter layer of specified materials. ...
baipo - ra die semiconductor equipmentPURPOSE:To prevent the generation of an abnormal etching, which causes the improper operation of a circuit, an electro-migration and the like, by a method wherein one side or both of an interlayer insulator layer and other wiring layer, which are layers ...
PURPOSE: To form a heterojunction bipolar transistor wherein all of the band gap differences are generated in one energy band, and other energy bands are practically matched, by constituting the respective semiconductors of a collector layer, a base layer, an emitter layer of specified materials. ...
baipo - ra forma thin film semiconductor equipmentPURPOSE:To prevent decrease of current amplification factor hFE for improving characteristics of a transistor by connecting an emitter region and a base lead- out region to a base region directly under a mask while isolating the emitter region from...
PURPOSE:To protect a base layer rendered thin for higher speeds from increased resistance and decreased voltage-withstanding capability by a method wherein a heterojunction bipolar semiconductor device is provided with a base layer of one conductivity type, a large non-doped or low-concentration ...