baipo - ra forma thin film semiconductor equipmentPURPOSE:To prevent decrease of current amplification factor hFE for improving characteristics of a transistor by connecting an emitter region and a base lead- out region to a base region directly under a mask while isolating the emitter region from...
baipo - ra die semiconductor equipmentPURPOSE:To prevent the generation of an abnormal etching, which causes the improper operation of a circuit, an electro-migration and the like, by a method wherein one side or both of an interlayer insulator layer and other wiring layer, which are layers ...
baipo - ra forma thin film semiconductor equipmentPURPOSE:To prevent decrease of current amplification factor hFE for improving characteristics of a transistor by connecting an emitter region and a base lead- out region to a base region directly under a mask while isolating the emitter region from...
PURPOSE: To form a heterojunction bipolar transistor wherein all of the band gap differences are generated in one energy band, and other energy bands are practically matched, by constituting the respective semiconductors of a collector layer, a base layer, an emitter layer of specified materials. ...
Within the substrate, shield electrodes (13, 15) can be provided to compensate to a large extent the undesirable effect of depletion layer diodes.KONTSUERUMAN GERUHARUTOコンツエルマンゲルハルトPUFUITSUENMAIAA HAINTSUプフイツエンマイアーハインツ...
baipo - ra - high frequency pawa in epitakishiyaru technology - transistorIn a high-frequency power transistor with bipolar epitaxial technology, the emitter (2), the base (3) and the collector (4) contacts are located on a main plane of a silicon chip. On the second, opposite main ...
In the same manner, ions are implanted for isolating operating region from the collector lead-out section 22. Finally, an emitter electrode 13 and a collector electrode are formed.上柳 喜一高橋 進宇佐川 利幸梅本 康成塚田 俊久
baipo - ra IC ime - jisensaPURPOSE:To obtain an image sensor characterized by high speed, low noise and high resolution by encoding a selecting input signal for scanning so that the number of bits changed in each step of scanning is ''1''. CONSTITUTION:When block input terminals 14, 15...
PURPOSE:To make it feasible to make a highly integrated bipolar circuit using the load resistance in small space and high resistance value by a method wherein a silicon-buried body as a load resistance is provided in an opening of a semiconductor wafer. CONSTITUTION:A silicon oxide film 4, ...
PURPOSE: To form a heterojunction bipolar transistor wherein all of the band gap differences are generated in one energy band, and other energy bands are practically matched, by constituting the respective semiconductors of a collector layer, a base layer, an emitter layer of specified materials. ...