baipo - ra semiconductor device and its production mannerキヤロルアンフイツシヤーデイビツドヘンリーパクスマンレジナルドチヤールスオールドフイールド
baipo - production manner null of ra 优质文献 相似文献baipo - production manner null of ra die PURPOSE: To increase breakdown voltage by separating a p+ buried isolation layer appropriately from a buried collector layer. ;CONSTITUTION: Sil... O Izumi 被引量: 0发表: 1996年 Hypothesis-Tissue...
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baipo - ra forma thin film semiconductor equipmentPURPOSE:To prevent decrease of current amplification factor hFE for improving characteristics of a transistor by connecting an emitter region and a base lead- out region to a base region directly under a mask while isolating the emitter region from...
baipo - ra forma thin film semiconductor equipmentPURPOSE:To prevent decrease of current amplification factor hFE for improving characteristics of a transistor by connecting an emitter region and a base lead- out region to a base region directly under a mask while isolating the emitter region from...
PURPOSE:To make it feasible to make a highly integrated bipolar circuit using the load resistance in small space and high resistance value by a method wherein a silicon-buried body as a load resistance is provided in an opening of a semiconductor wafer. CONSTITUTION:A silicon oxide film 4, ...
PURPOSE:To make it feasible to make a highly integrated bipolar circuit using the load resistance in small space and high resistance value by a method wherein a silicon-buried body as a load resistance is provided in an opening of a semiconductor wafer. CONSTITUTION:A silicon oxide film 4, ...
baipo - ra die semiconductor equipmentPURPOSE:To prevent the generation of an abnormal etching, which causes the improper operation of a circuit, an electro-migration and the like, by a method wherein one side or both of an interlayer insulator layer and other wiring layer, which are layers ...
In one embodiment of a vertical bipolar transistor constructed in accordance with the teachings of this invention, oxygen is implanted into the vertical bipolar transistor to provide a silicon dioxide layer between the base and collector of the vertical bipolar transistor. This silicon dioxide layer ...
PURPOSE:To form both a base region and an emitter region so as to be selfaligned with a first window, so that the base region and the emitter region are made small in area by a method wherein a sidewall is formed inside a first window opened through a lithography technique. CONSTITUTION...