A new record‐high room‐temperature electron Hall mobility ( μ RT =194cm 2 V 1 s 1 at n ≈8×10 15 cm 3 ) for β‐Ga 2 O 3 is demonstrated in the unintentionally doped thin film grown on (010) semi‐insulating substrate via metal‐organic chemical vapor deposition (MOCVD). A ...
The Far-Infrared Absolute Spectrophotometer (FIRAS) on the COBE satellite, gives different temperatures of the Cosmic Microwave Background. This deviation has a theoretical explanation in the Doppler effect on the dipole (weak) component of the radiation, the true microwave background of the Universe...
We experimentally investigate the influence of indium composition on the photovoltaic performance of InGaN/GaN multiple-quantum-well (MQW) solar cells. Three MQW structures with different In content are grown via metal-organic chemical vapor deposition, and then fabricated into solar cell devices. The...
aChemical vapor deposition (CVD) is the domi-nant mode of high-volume CNT production and 化学气相沉积 (CVD) 是大容积CNT生产统治方式和 [translate] acatalyst nanoparticles ( 15 ) 催化剂nanoparticles ( 15 ) [translate] aIf what we want or need isn't available to us, then we can often ...
Aiming at the Er~(3+)-Yb~(3+) co-doped fiber prepared by modified chemical vapor deposition(MCVD) process combined with solution doping method, the deposition process and dehydration process of the porous core layer are optimized by studying the influence of core layer number, flow rate of ...
Background chamber pressure was reduced from 13.7 Torr in discrete steps, and at each step, a series of shots while changing the position of the laser focus relative to the target were taken. The vacuum chamber setup is shown in Fig.1. With 3.5 mJ on target, the peak intensity of the ...
aTheory and current technology of semiconductor fabrication processes, including crystal growth, wafer preparation, lithography, liquid and vapor phase epitaxy, molecular-beam epitaxy of ultra-thin layers and superlattices, oxide growth, thin-film deposition, diffusion, ion implantation, etching and metalli...
Method for cleaning and preconditioning a chemical vapor deposition chamber dome The present invention relates generally to the field of semiconductor device manufacturing, and more specifically to a method for cleaning and preconditioning a dome in a chemical vapor deposition system. During cleaning, the...
ULTRAVIOLET (UV) AND PLASMA ASSISTED METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) PROCESS 12. The process of claim 1 where the substrates are metallic and have a biaxial buffer layer deposited upon them. 13. The process of claim 1 where the energy source produces radiation at a wavelength in...
chemical plating 化学电镀 chemical vapor deposition 化学蒸镀 coarsening 结晶粒粗大化 coating 涂布被覆 cold shortness 低温脆性 comemtite 渗碳体 controlled atmosphere 大气热处理 corner effect 锐角效应 creeping discharge 蠕缓放电 decarburization 脱碳处理 decarburizing 脱碳退火 depth of hardening 硬化深层 ...