Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman technique, and photoluminescence (PL) were used to characterize the electrospun nanofibers. FE-SEM results indicated that the diameters all of the nanofibers ranged from 100 to 300 nm, and the lengths of ...
用热蒸发CVD法制备了β-Ga2O3纳米材料,探讨了Au催化剂对纳米结构和形貌的影响,并研究了其光致发光特性.X射线衍射(XRD)分析显示产物为 单斜结构的β-Ga2 O3.扫描电子显... 马海林,李艳 - 《发光学报》 被引量: 18发表: 2013年 催化剂对热蒸发CVD法生长β-GaO纳米材料的结构及发光特性的影响 发光学报. ...
XRD和SEM测试结果表明,氢气等离子体处理后,Ga2O3薄膜的结晶度得到提高,晶粒尺寸增大,表面形貌更加均匀。对于Ce掺杂的Ga2O3薄膜,掺杂元素Ce的引入使得薄膜结构更为复杂,但氢气等离子体处理同样能改善其结构与形貌。 2.光学性能分析 紫外-可见分光光度计测试结果显示,氢气等离子体处理后,Ga2O3薄膜的吸收边发生红移,表明...
We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga 2 O 3 phase, and is synthesized in an epitaxial relationship with the GaN-core. 展开 ...
The morphology and structure of the products were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Large well alignment of network-like layered crystal beta-Ga2O3 structures that ...
XRD investigation demonstrated that the crystal is a monoclinic single -phase structure which is characterized by broad rocking curves. The etch pits density revealed by selective wet etching appeared to be high and was estimated as 2 & sdot; 107 cm - 2. The series of post-growth heat ...
摘要 通过在不同温度下氨化ZnO/Ga2O3膜,在Si衬底上成功制备了GaN纳米结构材料.氨化前,ZnO层和Ga2O3膜分别通过射频磁控溅射法依次溅射到Si衬底上.用X射线衍射(XRD)、红外傅里叶变换光谱(FTIR)分析了GaN晶体的结构... 关键词氨化 / ZnO/Ga2O3...
The out-of-plane epitaxial relationship as (310) B-Ga2O3// (0001) 伪-Al2O3 has been confirmed by XRD and HRTEM analysis. Under most growp conditions, B-Ga2O3 films exhibit pe coexistence of (310) and (201) out-of-plane orientation domains, and increasing pe growp temperatures and ...
X-ray diffraction (XRD), Fourier transform infrared spectroscopy... ML Pang,WY Shen,J Lin - 《Journal of Applied Physics》 被引量: 118发表: 2005年 Shape-Controllable Synthesis and Morphology-Dependent Luminescence Properties of GaOOH:Dy3+and β-Ga2O3:Dy3+ Dy3+-doped gallium oxide hydroxides...
采用XRD,SEM,TEM,AFM,Leika光学显微镜观察其结构特性及表面形貌;UV-Vis吸收透过光谱仪,拉曼光谱仪观察其光学特性.以及Keithley 2400测试系统对制备的材料与器件进行了相应的表征分析.论文研究的主要内容及结论如下:1.In As Sb的制备表征与In As Sb/Graphene/n-Si PGN异质结探测器的构建:采用RF磁控溅射的方法采用...