This paper describes process technologies for an x-ray mask using Ta as the x-ray absorber and SiC as the x-ray membrane. SiC can be grown heteroepitaxially in a coldwall LPCVD reactor at 1000°C and 3.5 torr using a gas mixture of SiHCl3, C3H8, and H2. SiC has a stress of 4 ×...