Atomic-resolution high-resolution high-voltage transmission electron microscopy was applied to the chemical structure analysis of silicon carbide. Each atomic column was imaged in dark contrast. Silicon and carbon were distinguished from each other in image contrast, i.e. silicon appeared in darker ...
This is contrary to the case of the adsorption of C and N. Energetically favorable diffusion paths were determined, which is crucial for the growth of silicon carbide nanotubes. No studies on this issue have been reported. 展开 关键词: Experimental/ adsorption binding energy carbon nanotubes ...
The crystal structure of α-Si3N4 was reinvestigated by an X-ray method using a single-crystal specimen prepared by chemical vapor deposition. The oxygen c... K Kato,Z Inoue,K Kijima,... - 《Journal of the American Ceramic Society》 被引量: 60发表: 2006年 Si-O bonded interactions in...
Structure and energetics of the silicon carbide clusters SiC3 and Si2C2 A comprehensiveab initiostudy of the four atom silicon carbide clustersSiC3andSi2C2using multiconfigurational self-consistent-field wave functions is prese... JM Rintelman,MS Gordon - 《Journal of Chemical Physics》 被引量:...
The atomic structure of the interfaces in amorphous–crystalline tungsten obtained in situ by ultrafast quenching to low temperatures from the liquid phase are investigated by the methods of field ion microscopy. A high degree of localization of imperfections and interfacial incoherence is established. ...
Atomic structures of single-crystalline iron-based nanowires crystallized inside multi-walled carbon nanotubes during pyrolysis on silicon substrates with ferrocene as a precursor were analyzed using high-resolution analytical transmission electron microscopy and electron diffraction. Standard crystal lattices, na...
Atomic structureSurface relaxation and reconstructionSingle crystal surfacesSemiconducting surfacesPhotoelectron spectroscopyScanning tunneling microscopyLow-energy electron diffraction (LEEDThe ( 1 1 0 2 ) mathContainer Loading Mathjax orientated plane of hexagonal silicon carbide of the 4H polytype consists of...
The distorted feature of the local structure is well described by the five distorted unit cells. Calculated results are compared with those obtained from EXAFS, indicating the excellent agreement between theoretical predictions and EXAFS measurements with the largest divergence not larger than 0.01 ?. ...
The procedures of transforming an experimental image that does not reflect the crystal structure intuitively into the structure map and of identifying Si and C atoms from the map are described. The atomic configurations for a 30 degrees partial dislocation and a microtwin have been derived at ...
Electronic and atomic structure of the 4 H-SiC (1 over(1, ¯) 0 2) -c (2 × 2) surface The (1 over(1, ¯) 0 2) orientated plane of hexagonal silicon carbide of the 4H polytype consists of a periodic arrangement of stripes with alternating b... C Virojanadara,M Hetzel,L ...