Previous studies about ion migration are either based on calculations or macro-measurements49 like time of flight secondary ion mass spectroscopy50, conductive atomic force microscopy51, and energy-dispersive X-ray mappings52,53, all without achieving the atomic-scale resolution in real space. Our ...
The electrochemical quartz crystal microbalance (EQCM) is a technique that monitors the mass of the working electrode as a function of time: the test material is deposited on a thin quartz crystal wafer, the resonance frequency of which, under optimum conditions, is inversely proportional to...
Compared with Ag/g-C3N4 (1 : 30 mass ratio) and Ag2O/g-... Y Liu,J Wang,P Yang - 《Rsc Advances》 被引量: 3发表: 2016年 Fabricating photoelectrochemical aptasensor for sensitive detection of aflatoxin B1 with visible-light-driven BiOBr/nitrogen-doped graphene nanoribbons A selective ...
It has also been validated that the MOFs prepared with this method are almost the same as those synthesized with the conventional ones, in terms of both micro-structures and optical properties [36]. It was further found that the FL intensity of the UiO-66-NH2 increased in a linear manner ...
The formation carrier mass and alteration of electronic structures in these of ripples 2D mate- rials. Buckling and ripple formation has also been predicted using molecular dynamics (MD) simulations under uniaxial compression27. The size of the ripples generated during compression is observed to be ...
Compared with top-down exfoliation, bottom-up vapor deposition has the advantages of mass production of 2D materials and high-quality control [65]. Table 1 summarizes some major ALD process parameters and applications. Table 1. ALD for some common materials. To date, the application of ALD ...
(5) ÑÑÑ λ 1 " λ 2 " λ 0, in the center of mass of BNB molecules, while: Ñ Vp λ q " 2 Ñ2 α| λ | ` 2 4πε0 α1qN qB Ñ |λ| and in minimum : Ñ 4α| λ 0| " 2 4πε0 α1qN qB Ñ | λ 0| Ñ qNqB Ñ3 " 8πε0αα1| λ ...
λ → 1 = λ → 2 = λ → 0 , in the center of mass of BNB molecules, while: V ( λ → ) = 2 α | λ → 2 | + 2 4 π ε 0 α ′ q N q B | λ → | and in minimum : 4 α | λ → 0 | = 2 4 π ε 0 α ′ q N q B | λ → 0 | → q N q...
The NH and NH2 radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a...
The standard SE can be described as [46]: JSE = A∗T2exp −q ϕB − qE/4πε0εr kBT (10) A∗ = 4π qk2B mox ∗ h3 = 120 mox∗ m0 (11) where A* is the effective Richardson constant, the free electron mass and the effective mass of electrons in the gate ...