3. As-grown MgB_2薄膜を用いたジョセフソン接合 [J] . 島影 尚, 王鎮 電子情報通信学会技術研究報告 . 2008,第458期 机译:约瑟夫森结,使用成膜的MgB_2薄膜 4. PLDPLD を用いた を用いた ZnMnGaOZnMnGaO ZnMnGaO ZnMnGaO_4ナノチェッカーボド薄膜の作製 ナノチェッカーボド薄膜の作製 ...
X射线衍射,扫描电子显微镜,X射线光电子能借测量表明生长的BNN膜是外延单晶膜。 www.opticsjournal.net 7. Areweasgrown-upsstillabletomemorizewords? 成年之后是否还能“记住”单词? www.jiangzuokong.com 8. Beinga non-executivedirectorissurelyasgrownup as itgets. ...
asgrown BaTiO3 适于拍照在一个单定义域州 翻译结果3复制译文编辑译文朗读译文返回顶部 asgrown BaTiO3 电影是在单个域状态 翻译结果4复制译文编辑译文朗读译文返回顶部 asgrown钛酸钡单晶系列3部影片在一个单一的域状态 翻译结果5复制译文编辑译文朗读译文返回顶部 asgrown BaTiO3影片在唯一领域状态 相关内容 aaxial ...
aforce microscopy (PFM) show that asgrown BaTiO3 films are in a single-domain state with out-of-plane polarization, indicating effective screening of the depolarizing field by surfaceadsorbates 力量显微学(PFM)展示asgrown BaTiO3影片在一个唯一领域状态以飞机极化,表明去极化的领域的有效的掩护由表面 [...
By introducing the GaAs interlayer and controling growth temperature,the p-type ZnMgO films were grown on(0001) Al2O3 substrates by metal organic chemical vapor deposition(MOCVD) method.The X-ray diffraction results indicated that the ZnMgO films showed c-axis preferential orientation at temperature...
Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, whi...
·grown Fe is andannealed findthatexistenceof layer Fe/(Ga,Mn)Asheterostructures,to ofMn Fe induced totheoutdiffusion l annealing.Thelayer disadvantageous during a biasin Wasobserved quantum exchangethe(Ga,Mn)Aslayer by superconducting interferencedevice measurements magnetometry.X-rayphotoelectron...
1. For the pristine MoS2 sample, interlaced nanosheets which are approximately vertically grown on the substrate are observed (Fig. 1a and b), while for the pristine Co3S4 sample, blocky crystallites are observed on the FTO substrate (Fig. 1c and d). Shown in Fig. 1e and f are top ...
2 器件的制备 H all器件关键的制造工艺包括台面腐蚀,蒸镀金属膜,合金、压焊引线等工艺[3].11台面腐蚀形成图形 为了减小几何效应对H all器件输出电压的影响,以及使制造工艺方便,H all器件一般 周宏伟 1970年出生,博士,目前从事分子束外延和H all器件的研究 1998204224收到,1998207215定稿 ...
Ultimately, interlaced SnS2 nanosheets were elaborately grown on the surface of NiS2 spheres by means of a simple solvothermal treatment (step III), resulting in the generation of hollow NiS2@SnS2 heterostructured composite. It should be mentioned that the composition of the NiS2 and SnS2 in ...