In ULVAC COATING CORPORATION, we developed a 9 - inch size KrF PSM mask Blanks prototype in 2016 and proposed a new high grade 9 - inch photomask. This time, we have further investigated and developed 9-inch size ArF PSM Mask Blanks corresponding to ArF Lithography Process, so we report ...
随着对用于步进器和扫描仪的小型化,KrF和ArF光刻工艺的进一步需求,对9英寸尺寸的掩模坯料也有需求。在ULVAC COATING CORPORATION中,我们于2016年开发了9英寸大小的KrF PSM掩模Blanks原型,并提出了一种新的高级9英寸光掩模。这次,我们进一步研究开发了与ArF光刻工艺相对应的9英寸大小的ArF ...
Phase angle on ArF HT PSM should be controlled within at leat +- 3dg and transmittance controlled within at least +-0.3percent after cleaning process & pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone ...
ArF Lithography that is expected the candidate far next generation optical lithography and attenuated Phase Shift Mask (att-PSM) will be adapted for 0.12 mum design-rule and beyond. For the next-generation lithography, the most of important requirement for mask process is enough resolution and good...
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As a photomask, 6-inch size binary Cr mask has been used for many years, but in recent years, the use of 9-inch binary Cr masks for Proximity Lithography Process in automotive applications, MEMS, packages, etc. has increased, and cost reduction has been taken. Since the miniaturization ...
TransmittanceSince the haze generation causes unexpected wafer yield losses, it has been a serious issue on wafer lithography asillumination wavelengths become shorter with 248nm and 193nm.~([1])Several papers regarding to cleaning and its effecton haze generation have been published. A mask is ...
As 6% attenuated phase shift masks (PSM) become commonly used in ArF advanced lithography for the 90nm Technology and mass production to print lines/ spaces as well as contacts, the specification and control of the phase angle and the width of the distribution of phase angles becomes critical ...
A Study of Removing Scan Damage on Advanced ArF PSM Mask by Dry Treatment before Cleaning(PPT)1. Introduction 2. Experimental 3. Date & Analysis 4. Summary & Acknowledgement.Irene ShiEric GuoMax LuSurface Preparation and Cleaning Conference 2016 (SPCC 2016): Santa Clara, California, USA, 19...