For daytime-only heat wave, days only exceed the 75th or 90th percentile of daily maximum temperature; nighttime-only heat wave, days only exceed the 75th or 90th percentile of daily minimum temperature; and compound heat wave, days exceed the 75th or 90th percentile of both daily maximum ...
Black, Latinx, Asian, and Native American communities have borne a disproportionate toll of the COVID-19 pandemic in the US4; inequities in vaccination would compound these disparities. Our survey was fielded at the time of the first emergency use authorization of COVID-19 vaccines in the US....
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The accompanying figures, in which like reference numerals refer to identical or functionally-similar elements throughout the separate views and which are incorporated in and form a part of the specification, further illustrate the present invention and, together with the detailed description of the in...
3.0 mm from the first edge; and after providing the substrate, depositing a first barrier film so as to cover at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the ...
Figure 1.Location of Kongqueting area in the Xihu Depression The yellow line inFig.1C represents the position of seismic profile inFig.3. 下载:全尺寸图片幻灯片 西湖凹陷内部充填了巨厚古近系、新近系、第四系沉积,包括古新统、始新统(宝石组、平湖组)、渐新统(花港组)、中新统(龙井组、玉泉组、...
The excellent carrier selectivity of passivated contacts enables low-resistance extraction of carriers without compromising surface passivation and has been instrumental in recent advances in high-efficiency solar cells. Here, we report on the application of phosphorus-doped polysilicon passivating contacts ...
The global Software-Defined Wide Area Network (SD-WAN) Market industry growth is projected to be USD 13.7 billion by 2027, growing from USD 3.4 billion in 2022, at a Compound Annual Growth Rate (CAGR) of 31.9% during the forecast period.
55. The method according to claim 51 such that said spin transition material is the compound of formula: Fe(trz)3(NO3)2. 56. A device comprising: an insulating material (2); a heating resistor (1) positioned on said insulating material (2); a conducting material plate (4) on said ...
8.The method according to claim 1, wherein the precursor is prepared byproviding the metal component of the precursor as an anhydrous metal compound, andreacting said metal component with anhydrous hydrogen fluoride. 9.The method according to claim 8, wherein said anhydrous compound is Mx+Bx, ...