网络释义 1. 直流激发氩离子激光器 光电英语词汇(D1) ... DC-excited 直流激光的DC-excited Ar-ion laser直流激发氩离子激光器DC-pumped 直流抽运的 ... www.diyifanwen.com|基于25个网页
Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSeAkihiko YoshikawaWide-Band-Gap Semiconductors
Stability of output optical power of argon ion laser and application of optical feedback; 氩离子激光器输出光功率稳定度与光反馈应用 2. The relationship between the output power of argon ion laser and the magnetic field intensity; 全金属结构氩离子激光器输出功率与磁场强度的关系 更多例句>> 6) ...
K.J.B.M. NieuwesteegTj. HollanderC.Th.J. AlkemadeElsevier B.V.Optics CommunicationsNieuwesteeg, K.J.B.M., Hollander, Tj., and Alkemade. C.Th.J. (1986). Spectral properties of an Ar-ion laser-pumped tunable cw dye laser. Opt. Con" 59, 285-289....
Frequency Stabilization of an Ar+ Laser with Molecular IodineThe frequency of the green argon ion laser line at 515 nm can be stabilized by various methods. In the preceding report by Hackel, Youmans, and Ezekiel, stabilization with an external molecular beam has been described (1). Hohimer, ...
When helium is added to argon, the relative peak intensity of the 4880- pulsed argon-ion laser scarcely decreases even at high currents whereas in pure argon it decreases remarkably after saturation. It is supposed that the changes of the neutral atom and ion densities contribute to the phenomen...
We report a study of charge transfer from laser-aligned Rydberg atoms in collisions with Ar+ ions in the velocity-matching regime. The Rydberg atoms in well-defined magnetic substates were prepared by two-photon laser optical pumping in a weak magnetic field. The results are compared with classi...
[22]. The fluorescent indicator was excited at 488 nm by using an argon ion laser, and fluorescence signals were recorded at wavelengths of ≥ 15 nm. The cells were repeatedly scanned at 2-ms intervals for a total duration of 6 s. Fluorescence imaging was performed using a laser ...
We explore the formation by Free-Electron-Laser radiation of Ar hollow states with two or three inner-shell holes. We find that even charged Ar ion states can be more populated than odd charged Ar ion states. This depends on the pulse intensity and the number of energetically accessible ...
Ar ion irradiationThe effect of 800 keV Ar ion irradiation on the microstructure and composition of ZrN films grown by pulsed laser deposition technique was investigated. Grazing incidence and symmetrical X-ray diffraction showed films were nanostructured, with grain size around 13nm and (111) ...