An edge termination structure includes: a third semiconductor region in the edge region adjoining the first semiconductor region; a surface section of the second semiconductor region adjoining a first main surface of the semiconductor body; and an amorphous passivation layer having a specific resistance...
Semiconductor wafer edge wet etching apparatus, comprises a nozzle for directing a inclined etchant stream onto an edge section (10k) of the rotating wafer. Apparatus for wet etching the edge (10k) of a semiconductor wafer (10) comprises a rotating wafer holder (12) and an overhead nozzle ...
of EP0780900 A monolithic semiconductor device having an edge structure, which comprises, on a substrate of a first type of doping, a control region (1) of a second type of doping, which is provided with an edge region (2), and a power region of a second type of doping, the particula...
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aProtection of device edges is an essential aspect of the design of high voltage semiconductor devices such as MOSFETs, IGBTs, MCTs, bipolar transistors, thyristors, and diodes. The edge protection, or edge termination structure, must perform the function of distributing the applied voltage over a...
Shairfe Muhammad Salahuddin, in Semiconductor Memories and Systems, 2022 3.2.3.2 Device variability sources Line Edge Roughness (LER) is a form of intrinsic random variability induced by both the subwavelength lithography and etching process resulting in nonuniform structures as shown in Fig. 3.10. ...
Edge termination for a double-sided blocking semiconductor power device, with - a semiconductor body (21) of one conductivity type, which has two mutually opposed major surfaces (30, 31), - a in the area of the first major surface (30) in the semiconductor body embedded (21) the first ...
His experience spans 19 years in the Telecommunications and Semiconductor industries, served in both Engineering and Marketing roles, in the US and Europe. Garry's current role is Strategic Product Marketing for the Interface and Isolation Technology Group. He is based in Limerick, Ireland. ...
Below the bandgap, the Franz-Keldysh electrorefractive change in the refractive index of a semiconductor due to application of a field can be approximated by a quadratic equation,ΔnER∝ E2 (Alping and Coldren, 1987). This is different from the Pockels electro-optic effect, where ΔnER∝ E...
A monolithic semiconductor device having an edge structure that facilitates integrating high power devices an logic devices on the same substrate. The semiconductor device includes on a substrate of a