A transistor includes a substrate having a plurality of source/drain regions and a channel region between the source/drain regions, a gate, and a gate dielectric layer between the gate and the substrate. The substrate tapers in a direction away from the gate dielectric layer in top view. ...
Both CP and PC based balance devices [17], [18] are used to design AND, OR, and XOR gates using differential pass transistor logic, and transient response is studied for each circuit. The circuit diagram for XOR gate is shown in Fig. 3(a); the circuits for AND and OR are designed ...
aPseudo-NMOS, static complementary CMOS, pass-transistor logic, differential logic: logic gate design and parameters, SPICE simulation 冒充NMOS,静态补全CMOS,通过晶体管逻辑,有差别的逻辑: 逻辑门设计和参量,香料模仿 [translate] 英语翻译 日语翻译 韩语翻译 德语翻译 法语翻译 俄语翻译 阿拉伯语翻译 西班牙语...
Carbon nanotube field-effect transistors with a high transconductance can be fabricated using dense arrays of nanotubes and a directly grown gate dielectric that conformably coats the nanotube array. Aaron D. Franklin News & Views06 Dec 2024 Nature Electronics P: 1-2 Latest Research and Reviews...
Fig. 1: The operation principle of the proposed frequency-domain zero switching-energy logic NOT gate. aA frequency-domain (FD), passive NOT gate is implemented using a lossless passive all-pass (phase-only) linear filter. To perform the logical NOT operation on the digital (binary) input da...
Figure 1.(a) Scanning electron microscopy and (b) schematic illustration of 3D-stacked Ga2O3/NiO ambipolar transistors. Here, Ga2O3 and NiO are n- and p-channels respectively. (c) Cross-sectional transmission electron microscopy image of the gate region with zoom-in (d) bottom and (e) ...
Figure 9. Synchronous Buck Converter and Its Transistor Gate Signals. AC Switching Losses In addition to the DC conduction losses, there are other AC/switching related power losses due to the nonideal power components: MOSFET switching losses.A real transistor requires time to be turned on or off...
With a fixed voltage on the gate, the effective drive voltage for either transistor varies in proportion to the polarity and magnitude of the analog signal passing through the switch. The dashed lines in Figure 2 show that when the input signal approaches the supplies, the channel of one devic...
b Cross-section SEM view of the device fabricated using the Si-based SOI 130 nm technology node (scale bar: 500 nm). c One-transistor logic AND/OR gate in comparison to the six-transistor logic gates. The first input, Input1, is the voltage on the top gate, VGS, and the ...
Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method The insulated-gate bipolar transistor (IGBT) is one of the most promising power switching devices. The purpose of this study is to develop a response surfa... CL Wang - 《Japanese Journal of Applied Physics》...