As a demonstration of the activity modulation migration enhanced epitaxy (AM-MEE) heteroepitaxial 2H-AlN thin films of 53.8 nm and 171.3 nm thickness on Si(111) on a double buffer layer (DBL) have been grown by the AM-MEE of plasma assisted molecular beam epitaxy (PA-MBE) method. It is...
The growth of 2H-AlN(0 0 0 1)/β-Si 3N 4/Si(1 1 1) structure was also performed. RMS value of AlN grown on β-Si 3N 4 which was formed by (N+N*) became 0.88 nm.doi:10.1016/j.jcrysgro.2009.01.076N. YamabeDepartment of Electrical EngineeringH. Shimomura...
Optical measurements are used to investigate the crystalline quality and the stress in thin AlN layers; these thin films are grown on cubic silicon carbide layers which are in turn grown on silicon (111) substrates. Different Ge amounts were deposited at the silicon substrate in order to reduce...
YamabeN.ShimomuraH.ShimamuraT.OhachiingentaconnectJournal of Crystal GrowthYamabe, N. et al. (2009). Nitridation of Si(1 1 1) for growth of 2H-AlN(0 0 0 1)/Si3N4 /Si(1 1 1) structure, J. Crystal Growth: 3049-3053.