AlGaN/GaN HEMT能带工程和界面调制AlGaN/GaN HEMT energy band engineering and interface modulation胡卫国中国科学院北京纳米能源与系统研究所研究员HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences 展开更多
The article reports on the semiconductor device, AlGaN/GaN high-electron-mobility transistor (HEMT), that features a high two-dimensional electron gas (2DEG) structure, high saturation drift velocity, high breakdown voltage and high-temperature resistance. HEMT was designed by Technology Computer ...
In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technology is extension of well-established Eudyna commercial L-/S-band AlGaN/GaN HEMT technology. The device shows output power of over 60W and a high linear gain of 9.6dB in...
蓝宝石衬底AlGaN/GaN共栅共源微波 HEMTs器件 第25卷第12期 2004年l2月 半导体 CHINESEJOURNALOFSEMICONDUCTORS Vo1.25,No.12 Dec.,2004 CascodeConnectedAlGaN/GaNMicrowaveHEMTs onSapphireSubstrates Sha0Gang,LiuXinyu,HeZhijing,LiuJJanandWuDexin (InstituteofMicroelectronics,TheChineseAcademyofSciences,Beijing100029,...
AlGaN/GaN high electron mobility transistors (HEMTs) were improved for X-band and Ku-band applications. The power added efficiency (PAE) was achieved over 40% for X-band and over 30% for Ku-band. The developed devices combined two AlGaN/GaN HEMTs of 12 mm gate periphery and exhibited th...
AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计 来自 OALib 喜欢 0 阅读量: 109 摘要: 研制了一种基于AlGaN/GaN HEMT的功率合成技术的混合集成放大器电路.该电路包含4个10×120 μm的HEMT晶体管以及一个Wilkinson功率合成器和...
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An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 mu m showed a unity current gain cut-off frequency (f(T)) o
nitrogen-polar (Al)GaN/AlNsapphire substratesA nitrogen‐polar (N‐polar) AlGaN/AlN high‐electron‐mobility transistor (HEMT) is proposed, and the generation of a 2D electron gas (2DEG) is simulated. The band diagram of N‐polar (Al)GaN/AlN shows the generation of the 2DEG, whereas ...
高电子迁移率晶体管(HEMT砷化镓单片微波集成电路(GaAs MMIC微波串联电感反馈As the most remarkable effect in GaN microwave power device, Current slump has been studied widely.However,there still exist unsolved proplems.Based on the analysis of experiment and theory on the AlGaN/GaN high electron ...