Understanding the Clean Interface Between Covalent Si and Ionic Al2O3Hongjun XiangJuarez L. F. da SilvaHoward M. BranzSu-Huai WeiAPS March Meeting Abstracts
The material removal rate (MRR or wear rate) depends strongly on the material being polished. Depending on the type of atomic bonding, the crystal structure and the microstructure of the workpiece and the abrasives, the wear mechanisms may differ [4]. The ionic and/or covalent atomic bonds of...
Growth of Cu films on (0001)Al2O3 substrates can result in metallic Cu—Al or ionic-covalent Cu—O bonds at atomically abrupt interfaces. The type of bondi... C Scheu - 《Interface Science》 被引量: 13发表: 2004年 Influence of the hydroxylation of g-Al2O3 surfaces on the stability ...
Fused silica glass (T-4040, Covalent Materials Corp.) was used for reference. Density and atomic packing density. The density ρ of the glasses was determined using gas pycnometry (rAtui,iMOsvvaieionnislcgygdtra.hotdSVhemhreiioaoei'fsnsrnotnntrirhcmouicenrmusai,aldobaAnnieuCdcri,sccg...
With the presence of an oxide constituent, the bonding of interface is changed from the delocalized metallic bonding to ionic or covalent bonding19,20. Experiments indicate that the special ORs with low-indexed planes between metal and oxide crystal exist in metal/oxide interface21. It has been ...
[23] or SrTiO3[24], indicating virtues as well as limitations of empirical potentials, particularly in cases where the character of bonding is not almost purely metallic, covalent or ionic. In HRTEM a very high resolution of small spatial distances (less than 2 Å) and an imaging of ...
The result of the calculation indicates that the ionic bonding between Al and O ions, and the covalent bonding between Al and the surrounding cation, are strengthened by the presence of Ln ions. A correlation is found between the creep resistance and product of net charges of the constituent ...
Due to the mixed ionic and covalent bonding, the material is highly insulating [4,5], thus being usually applied as a top layer to act as a thermal and diffusion barrier. The CVD technique is commonly employed since it is the only deposition method that allows the economical largescale ...
The two newly generated non-bridged oxygen atoms are linked by Mg2+ ions that resemble ionic bonds [23], which are weaker than the covalent bonds in the cordierite. Therefore, the etching rate of the amorphous phase is higher than the cordierite phase. phase, Mg2+ ions break up the SiO2...
We study the coherent and semi-coherent Al/a-Al2O3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been ...