Optical and interface characteristics of Al 0.56 Ga 0.44 N/Al 0.62 Ga 0.38 N multiquantum wells with 280nm emission grown by plasma-assisted molecular beam epitaxyA1. InterfacesA3. Molecular beam epitaxyA3. Quantum wellsB1. NitridesWe have investigated the nature of Al 0.56 Ga 0.44 N/Al ...