AEK/艾翌克 美国进口 SI70ES 鱼眼球头杆端关节轴承 内螺纹正牙【M56*4.0】 京东价 ￥降价通知 累计评价 0 促销 展开促销 配送至 --请选择-- 支持 品牌名称:AEK 商品型号:SI30ES-SIL80ES 订货编码:100057596489 包装规格:- 选择颜色 SI30ES内螺纹正牙 ...
制造商编号SIHD2N80AE-GE3 制造商Vishay(威世) 授权代理品牌 唯样编号A-SIHD2N80AE-GE3 供货自营 无铅情况/RoHs无铅/符合RoHs 描述 2.9A(Tc) N-Channel 2.9 Ohms @ 500mA,10V 62.5W(Tc) TO-252 -55℃~150℃ 800V 数据手册发送到邮箱 PDF资料下载 ...
制造商编号 SIHD11N80AE-GE3 制造商 Vishay(威世) 授权代理品牌 唯样编号 A-SIHD11N80AE-GE3 供货 自营 无铅情况/RoHs 无铅/符合RoHs 描述 8A(Tc) N-Channel 450 mOhms @ 5.5A,10V 78W(Tc) TO-252 -55℃~150℃ 800V分享: 数据手册 PDF资料下载 暂无数据 参数信息 常见问题 参数有误?
SiHD11N80AE E Series Power MOSFET General Information General Information Useful Web Links General Information Device Orientation Device Orientation for TO-252 and TO-263 (T5) Markings Part Marking Information IPAK (TO-251), DPAK (TO-252) (High Voltage) ...
SIHD2N80AE-GE3由VISHAY(威世)设计生产,立创商城现货销售。SIHD2N80AE-GE3价格参考￥5.320944。VISHAY(威世) SIHD2N80AE-GE3参数名称:类型:1个N沟道;漏源电压(Vdss):800V;连续漏极电流(Id):1.8A;导通电阻(RDS(on)):2.9Ω@10V,500mA;耗散功率(Pd):62.5W;阈值电压
Datasheet SiHD2N80AE E Series Power MOSFET General Information Device Orientation Device Orientation for TO-252 and TO-263 (T5) Markings Part Marking Information IPAK (TO-251), DPAK (TO-252) (High Voltage) Pad Guidelines Application Note 826 RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) Packag...
商品型号 SIHP11N80AE-GE3 商品编号 C3280682 商品封装 TO-220AB 包装方式 管装 商品毛重 1克(g) 商品参数 资料纠错查看类似商品 属性参数值 商品目录场效应管(MOSFET) 类型1个N沟道 漏源电压(Vdss)800V 连续漏极电流(Id)5A 导通电阻(RDS(on))391mΩ@10V,5.5A ...
The road address of the location is 80, Hyeongjehaean-ro, Andeok-myeon, Seogwipo-si, Jeju-do, you can find the Land-lot address of the location, the postal code and other other information about the address. Address Information The address system in Korea has been updated and the...
A lo00 X gate leakage reduction was demonstrated for nMOS using Hf02 . Acceptable nMOS performance is achieved. Further work is needed to improve PMOS performance. ... Fig. 8: Id-Vd characteristics of a W/L Active oxygen diffuses through metal - 10 +m/lO pm PolySi/ Hf02 ...Hobbs...
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