Static Induction Thyristor generally abbreviated as SITH is a self-controlled device similar to a gate turn-off thyristor. Field-controlled thyristor (FCT) and field-controlled diode (FCD) are further names for the SITH. SITH has a gate mechanism that can stop the flow of anode current. It i...
The GaN FET structure is a lateral device (Figure 1) without a bipolar parasitic device such as the body diode of MOSFETs. It is a natural bidirectional device acting with a VGS suitably over the threshold voltage (VGS = 5 V in the case of study) to obtain the 2DEG condition. When HE...