Finally, in the design-technology co-optimization (DTCO) and system-technology co-optimization (STCO) scaling era, new scaling boosters (such as backside power delivery networks (BSPDNs)) and advanced 3D integration technologies (such as wafer-to-wafer hybrid bonding) are increasingly being u...
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Electron curing technology allows for the curing of many types of products, such as complex shaped, those containing different types of fibres, and up to 15 cm thick. Our work has been done principally with the AECL's 10 MeV, 1 kW electron accelerator; we have also done some comparative ...
select article Electron spin–spin relaxation in dilute magnetic semiconductor Zn1−xMn2+xAs2 Research articleAbstract only Electron spin–spin relaxation in dilute magnetic semiconductor Zn1−xMn2+xAs2 Sang Won Ahn, Seong Gi Min, Hee Jae Kang, Suhk Kun Oh Pages 163-165 Article preview ...
EuSe38,39. As demonstrated by transition electron microscopy (TEM) images, the obtained NaGdF4:Yb,Tm cores show uniform spherical morphology (Fig.S1). The lanthanide-doped upconversion nanoparticle NaGdF4:Yb,Tm@NaYF4:50%Tb (denoted as LNP:50%Tb) and NaGdF4:Yb,Tm@NaYF4:50%Tb@EuSe (LNP...
Charge recombination centers, also known as trap states, are formed within the bandgap of semiconductors due to point defects in the crystals. These trap states can exist as either shallow or deep electron traps, and their specific positions are determined by the energy levels in relation to the...
(vdWs) electrodes. Research has focused primarily on the electronic energy band alignment, while the effects of momentum mismatch on carrier transport across the vdWs gaps are largely neglected. Graphene‐silicon junctions are utilized to demonstrate that electron momentum distribution can dominate the ...
• Reports documenting EPRI's investigations to reduce the cost of fabricating components through advanced manufacturing techniques such as powder metallurgy-hot isostatic pressing (PM-HIP), electron beam welding, diode laser cladding, and additive manufacturing. These technologies may enable the manufactu...
近日,来自济南大学的高广刚教授,在国际知名期刊Advanced Functional Materials上发表题为“The Explicit Multi-Electron Catalytic Mechanism of Heteropolyvanadotungstate Dominating Ultra-Durable Room-Temperature Na-S Batteries”的观点文章。该观点文章首次揭示了具有精确钒(V)取代位点的Keggin型多金属氧酸盐H5PW10V2O40...
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