Flash memory characteristics(1) (continued) Symbol Parameter Conditions Min Typ tprog_bank Bank (32 Kbyte(2)) programming time tME Mass erase time IDD(FlashA) Average consumption from VDD IDD(FlashP) Maximum current (peak) Normal programming Fast programming - Programming Page erase Mass erase ...
9.2.2.5 Noise and Input Impedance Considerations If vn_res represents the input-referred rms noise from all the resistors, vn_op represents the input-referred rms noise of OPA333, and vn_ADC represents the input-referred rms noise of ADS1115, the total input-referred noise of the entire ...
(1)(x+2)2=5解: x+2=±5...4分x+2=√5或x+2=-5...6分x1=√5-2,x2=-√5-2..
ADC3641, ADC3642, ADC3643 SBAS886A – OCTOBER 2020 – REVISED MAY 2022 ADC364x 14-bit, 10-MSPS to 65-MSPS, Low-Noise, Low Power Dual Channel ADC 1 Features • Dual channel • 14-bit 10/25/65 MSPS ADC • Noise floor: –155 dBFS/Hz • Ultra-low power with optimized power...
就是官方的battery service 什么都没改,按理说1.25v的参考电压,输入选择vdd/3,10bit的adc通道,量程范围为0～511,那么3v对应采集到的adc应该是3/3/1.25*511=409,2v则应该是273。但是用万用表测量实际供电电压3v的时候,debug的时候HalAdcRead采集到的adc是430,2v的时候是289。通过修改 ...
型号: ADC128S102CIMTX 封装: TSSOP16 批号: 20+ 数量: 36000 类别: 集成电路(IC) 数据采集 - 模数转换器(ADC) 制造商: Texas Instruments 位数: 12 采样率(每秒): 1M 输入数: 8 输入类型: 单端 数据接口: SPI,DSP 配置: MUX-S/H-ADC 比率- S/H:ADC: 1:1 A/D 转换器数: 1 架构: SAR 参...
(A) 1 D 2 E 3 D 4C 5 D 6 D 7 B 8 D 9 D 10 E 11 B 12 C 13 D 14 A 15 C 16 E 17 D 18 B 19 D 20 C 21 B 22 B 23 E 24 D 25 C 26 B 27 B 28 C 29 C 30 D 31 C 32 B 33 D 34 C 35 D 36 A 37 B 38 C 39 C 40 D 41 ...
通道数量: 8 Channel 接口类型: SPI 采样比: 1 MS/s 输入类型: Single-Ended 结构: SAR 模拟电源电压: 2.7 V to 5.25 V 数字电源电压: 2.7 V to 5.25 V SNR – 信噪比: 73 dB 最小工作温度: - 40 C 最大工作温度: + 105 C DNL - 微分非线性: - 0.9 LSB to + 1.5 LSB 增益误差: 2 LSB...
结果1 题目【题目】20.如图.AD是△ABC的中线,AD=5,tan∠BAD=3/4S_(△ADC)=15 求线段AC的长.A抛物线 y=x^2-2x+3 的最BC(第20题图)小值为.18.如图,AB是⊙0的弦,半径 OD⊥AB 相关知识点: 试题来源: 解析 【解析】20.▱ 反馈 收藏 ...
The prototype ADC is implemented in TSMC 65 nm 1P9M 1.2 V standard CMOS process. The simulated SFDR and SNDR are 75.7 and 71.7 dB with an oversampling ratio of 10 while consuming 4.8 mW at 100 MS/s.doi:10.1016/j.mejo.2021.105253Yu, Zhe...