The paper proposes a new active dv/dt control circuit with fast response to change the 600 V GaN HEMT turn-off and turn-on dv/dt slew rate freely and independently, while the converter is running. To achieve this, simulations are first performed to verify the circuit function, considering ...
For the first time, transfer-free method by plasma-enhanced chemical vapor deposition (PECVD) is used to grow graphene directly on GaN Micro-LED samples and prepared graphene transistors. This approach avoids doping and damage to the graphene during the transfer process, significantly shortens the ...
Department of Electronic Engineering, Chungwoon University, 113 Sukgol-ro, Michuhol-gu, Incheon, Republic of KoreaSu Kon KimNational Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 790-784, Republic of KoreaJae Kyoung Mun...
Excellent results are achieved for DC, S-parameters, harmonic and intermodulation distortion, and load-pull figures of merit, over a very wide range of bias conditions, complex loads, powers, and frequencies.Jianjun XuAgilent Technol., Inc., Santa Rosa, CA, USA...
Then, a high field-effect mobility of similar to 27.9cm(2)/V.s and a low sub-threshold swing of 0.079 V/decade are achieved by the good interface quality. This structure with both-sideoxygen-rich active layer exhibits its potential application for the future high-resolution and large-size ...
Solid state physics Investigation of electrically-active defects in AlGaN/GaN high electron mobility transistors by spatially-resolved spectroscopic scanned probe techniques THE OHIO STATE UNIVERSITY Jonathan P. Pelz CardwellDrew WIn this work, scanned probe microscopy (SPM) based methods are developed ...
Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors. Yang J,Cui S,Ma T. P. et al. Applied Physics . 2013J. Yang, S. Cui, T. P. Ma, T.-H. Hung, D. Nath, S. Krishnamoorthy, and S. Rajan, "Electron tunneling spectroscopy...