Transistor amplifier in a common-emitter circuit with an output by means of supportHERKERT DIPL-ING HANS
结果1 题目A transistor amplifier has an input signal applied to its emitter terminal and an output signal taken from its collector terminal. The amplifier is a(n) ( ).相关知识点: 试题来源: 解析 参考答案: common-base amplifier 反馈 收藏 ...
In the CE (common emitter) amplifier composed of NPN transistor, when the input signal is a sinusoidal waveform of 1 kHz and 5 mV, the output voltage waveform has a distortion of bottom flattening. This distortion is ( ). A、saturation distortion ...
A transistor amplifier has an input signal applied to its emitter terminal and an output signal taken from its collector terminal. The amplifier is a(n) ___. A.common-emitter amplifier B.common-base amplifier C.common-collector amplifier D.emitter follower 点击查看答案进入小...
A transistor having the mesh emitter structure 专利内容由知识产权出版社提供 专利名称:A transistor having the mesh emitter s t r uct ur e 发明人:Nakatani, Yasutaka,Kuryu, Isamu 申请号:EP82106552.1 申请日:19820721 公开号:EP0071161B1 公开日:19871014 摘要:The present invention relates to a ...
When a BJT transistor worked in saturation region, the base-emitter junction is ( ) biased, and the base-collector junction is ( ) biased.A.Forward,forwardB.Reverse, reverseC.Forward, reverseD.Reverse, forward的答案是什么.用刷刷题APP,拍照搜索答疑.刷刷题
Like an NPN transistor, a PNP can operate in saturation, linear operation, reverse active, or it can be cut off. [Aaron] shows you how to bias a transistor and you’ll see it isn’t much different from an NPN except the base-emitter diode junction is reversed. As you might expect, ...
专利名称：Transistor having a novel layout and an emitter having more than one feed point 发明人：Hugh J. Finlay 申请号：US09687381 申请日：20001013 公开号：US06627925B1 公开日：20030930 专利内容由知识产权出版社提供 专利附图：摘要：A transistor with a novel compact layout is provided. The ...
A New Voltage between Collector and Emitter (V_(CE)) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor A new protection circuit employing a voltage between collector and emitter (V_(CE)) sensing scheme for the short-circuit withstanding capability of ...
This makes the transistor switch ON. Figure 2 demonstrates the saturation region characteristics. • The input and base are connected to VCC • Base-Emitter voltage VBE > 0.7v • Base-Emitter junction is forward biased • Base-Collector junction is forward biased • Transistor is "fully...