In this article, we show that Mg doped hBN (ambient wet-transfer process) on n-type Ga2O3can lead to the formation of high quality stable pn junction diodes. To the best of our knowledge, this is the first report of a pn heterojunction formed between multilayer p-type hBN and n-type ...
β-Ga2O3γ-CuIheterojunctionbroadband photodetectorself-powerThe symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated...
In our study, a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction was generated by depositing a Sn-doped n-type Ga2O3 thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A/W without a power supply and had ...
GaN/Sn:Ga2O3 pn junctionsuperhigh photoresponsivity3.05 A/Wpotential barrierUltraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the 100 photovoltaic effect, self-powered UV photodetectors can measure ...
Finally, a single layer 2D Ga2O3with high GaI vacancy (VGaI) ratio can be used as the ferromagnetic layer to obtain the magnetic tunnel junction (MTJ) with high spin filtering effect at the Fermi level. Ga vacant Ga2O3/MgO/Ga vacant Ga2O3MTJ exhibits excellent spin-filtering effect (...
Although the reported vertical Ga2O3MOSFET with CBL can work in the enhanced mode, its breakdown voltage is still temporarily at a low level, which is due to the negative effect of the lack of p-type doping and the corresponding PN junction in Ga2O3, resulting in a low device performance...