The development of next-generation materials such as hBN and Ga2O3remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type hBN and n-type Ga2O3, forming a pseudo-vertical pn ...
In this article, we show that Mg doped hBN (ambient wet-transfer process) on n-type Ga2O3can lead to the formation of high quality stable pn junction diodes. To the best of our knowledge, this is the first report of a pn heterojunction formed between multilayer p-type hBN and n-type ...
β-Ga2O3γ-CuIheterojunctionbroadband photodetectorself-powerThe symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated...
GaN/Sn:Ga2O3 pn junctionsuperhigh photoresponsivity3.05 A/Wpotential barrierUltraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the 100 photovoltaic effect, self-powered UV photodetectors can measure ...
In this work, a high-performance Pt/Ga2O3/p-Si Schottky emitter solar-blind UV bipolar junction phototransistor is demonstrated. It exhibits a peak responsivity (@246 nm) of 1632.8 A/W under a bias of 5 V. This responsivity is significantly enhanced compared to the Al/Ga2O3/p-...
Finally, a single layer 2D Ga2O3with high GaI vacancy (VGaI) ratio can be used as the ferromagnetic layer to obtain the magnetic tunnel junction (MTJ) with high spin filtering effect at the Fermi level. Ga vacant Ga2O3/MgO/Ga vacant Ga2O3MTJ exhibits excellent spin-filtering effect (...