The rationale for the choice of gate length and gate width of the HEMTs is explained in Supplementary Note 3. An array of HEMTs with a gate length of 300 nm (see Supplementary Figs. 3 and 4a) and a gate width of 90 μm was fabricated on an epitaxial AlGaN/GaN-on-Si wafer ...
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A high data rate RF-DAC and a power detector (PD) are designed and fabricated in a 250 nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A communication link using the Tx-Rx over polymer microwave fiber (PMF) is measured. The link consists of a pulse ...
工作频率 5 GHz 工作电源电压 5 V 安装风格 SMD/SMT 封装/ 箱体 MCM-12 湿度敏感性 Yes 系列 SKY85735 可售卖地 全国 型号 SKY85735-11 技术参数 品牌: SKYWORKS 型号: SKY85735-11 封装: QFN 批号: 21+ 数量: 14560 制造商: Skyworks 产品种类: 射频前端 RoHS: 是 工作频率: 5 GHz 工作...