6 inch / 150mm Thickness 200~3000um Finish As cut, lapped, etched,SSP,DSP, etc Orientation (100) (111)(110)(531) (553) etc Off cut Up to 4 deg Type/Dopant P/B, N/Phos, N/As, N/Sb, Intrinsic Resistivity CZ/MCZ : From 0.001 to 1000 ohm-cm ...
Dummy Wafer也被称为Test Wafer,中文名称为测试片/假片,在实际生产之前,需要对整个生产线中的设备和其他生产条件作出评估和测试,提高稳定性,会预先使用Dummy Wafer假片来进行测试,与Prime Wafer(正片)有区别。 Dummy Wafer在实验检查、评估传输以及加工形状等条件中
SiC MOS 6英寸晶圆 6inch wafer 首页ꄲSiC MOS芯片ꄲSiC MOS 6英寸晶圆 6inch wafer ꁆ ꁇ
Package Size 20.00cm * 20.00cm * 20.00cm Package Gross Weight 1.000kg Product Description N type 6 inch 150mm optical Silicon wafer 2" 3" 4" 5" 6" 8" 12" 2inch 3inch 4inch 5inch 6inch 8inch 12inch Optical window materials comparison: Material Silicon Grade Dummy Diamet...
品牌:Samsung/三星 型号:VIG075N1K2G 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:耗尽型 用途:MOS-HBM/半桥组件 封装外形:WAFER/裸芯片 材料:IGBT绝缘栅比极 是否跨境出口专供货源:否 封装:Cu heatsink 32X120mmX3.0T 规格:75A 1200V wafer 评价...
6英寸硅基氮化镓外延片 6-inch GaN on Silicon Dmode HEMT Epiwafer 外延结构Layer Name厚度Thickness备注Notes Cap-GaN3nm Barrier AlGaN20-30nmAl%:20-27% AlN1nm UGaN200nm CGaN1500nm Buffer AlGaN3200nmAl%:10-70% Buffer AlN250nm Substrate Si(Notch、Flat)1000μm150 mm Si (111) ...
商品信息 商品描述
Package Size 20.00cm * 20.00cm * 20.00cm Package Gross Weight 1.000kg Product Description N-Type 3 4 6 Inch Silicon Wafer Silicon wafer is a very thin round disk cut from high-purity silicon. A round silicon ingot is sliced to thicknesses of approximately 1mm. The surfaces of the re...
Customized 4 Inch 6 Inch 4h-N Type Sic Bare Substrate Silicon Carbide Wafer, Find Details and Price about Sic Wafer Silicon Carbide Wafer from Customized 4 Inch 6 Inch 4h-N Type Sic Bare Substrate Silicon Carbide Wafer - Hebei Baotong New Material Techno
阿里巴巴为您提供了1200V 6寸/8寸 碳化硅衬底 6inch SiC Wafer /8inch SiC Wafer等产品,这里云集了众多的供应商,采购商,制造商。欲了解更多1200V 6寸/8寸 碳化硅衬底 6inch SiC Wafer /8inch SiC Wafer信息,请访问阿里巴巴批发网!