3PB110-06-3,CKD水冷却装置操作方法 2%F.S.■ 温度稳定性、耐久性提高・零点变动:0.06%F.S.、斜率变动:0.06%F.S.、耐久性:3倍(与以往相比)■ 配备新功・输入信号0%F.S.时无残压。选择压力控制模式。 3PB110-06-3,CKD水冷却装置操作方法
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Here, by utilizing an interface engineering scheme, we have achieved the first Pb-doped p-type Bi2Se3 thin films. Furthermore, at heavy Pb-doping, the mobility turns out to be substantially higher than that of Ca-doped samples, suggesting that Pb is a less disruptive dopant than Ca. The...
Bilayered ferroelectric thin films consisting of Pb(Zr{sub}0.52Ti{sub}0.48)O{sub}3 (PZT) and (Bi{sub}3.15Nd{sub}0.85)Ti{sub}3O{sub}12 (BNT) have been successfully synthesized on Pt/Ti/SiO{sub}2/Si substrates, via a combined sol-gel and rf-sputtering route. Their ferroelectric and...