往后发展JEDEC规范规定的NAND IO速度越来越快,参考IMW 2022论文《3D NAND Flash Status and Trend》预测,基于CuA架构,当超过5GT/s,由于CMOS和Array在同一片晶圆上,Array生产制造中有超高温度的工艺步骤,将会影响和限制超过5GT/s NAND IO电路的生产和电路质量,一种解决方法是Wafer Stacking架构【2】。 Wafer Stacking...
堆叠这些模块分区的主要技术方法是晶圆键合技术（wafer-to-wafer bonding ），通过混合键合技术实现两片晶圆的江河。顶部晶圆和底部晶圆键合钱需要进行对位，现阶段，晶圆键合实现300mm晶圆1.8um间距的混合键合，并获得了优异的结果。精准的对位是堆叠晶圆的焊接金属垫准确对位，这对于实现高良率至关重要。Wafer-to-wafe...
台积电SoIC设计架构示意。(source: vlsisymposium.org, 制图:CTIMES)同期亮相的还有WoW技术,即 Wafer-on-Wafer (WoW,堆叠晶圆),就像是3D NAND闪存多层堆叠一样,将两层Die以镜像方式垂直堆叠起来,有望用于生产显卡GPU,创造出晶体管规模更大的GPU。 来源:台积电台积电方面表示,这两个封装技术将会在公司的先进封装布局...
Wafer bondingThermo-compressionSputteringNbNSuperconductivity3D integration has well-developed for traditional CMOS technology operating at room temperature, but few studies have been performed for cryogenic applications such as quantum computers. In this paper, a wafer-to-wafer bonding of superconductive ...
Looking ahead, the future of 3D NAND technology looks promising, with the possibility of seeing productssurpassing 500 layerswithin the next two to three years. Advanced hybrid bonding technology will play a crucial role in achieving even higher layer counts, potentially reaching 600- or 700-layer...
逻辑/存储皆有应用场景,键合方式因地制宜。3D封装的应用场景主要在3D存储和3D SoC,前者通过TSV+微焊球(micro bumps)/混合键合可以制造HBM,一般通过晶圆-晶圆(Wafer to Wafer,W2W)之间的混合键合可以制造3D NAND;后者通过裸芯片-晶圆(Die to Wafer,D2W)/W2W之间的混...
1、晶圆到晶圆(Wafer-to-Wafer):两个制造好的晶圆直接键合在一起,W2W提供更高的对准精度、吞吐量和键合良率,目前绝大多数混合键合通过W2W完成,比较典型的是长江存储3D NAND Xstacking技术的突破; 2、芯片到晶圆(Die-to-Wafer):将切割好的Die贴到另一个完成的晶圆上,与晶圆上的Die实现键合,又可以分为两类:1...
两家公司已经使用GF的晶圆级邦定(wafer-to-wafer bonding),验证了3D设计测试(DFT,3D Design-for-Test)方法。GF表示,该技术每平方毫米可以实现高达100万个3D连接,使其具有高度可扩展性,并有望延长12纳米3D芯片的使用寿命。 Arm是最近一家对3D芯片表现出兴趣的IP公司之一。英特尔去年宣布了其对3D芯片堆叠的研究,AMD...
Wafer-to-wafer bonding is used to form three-dimensional (3D) memory components such as 3D NAND flash memory with shared control circuitry on one die to access arrays on multiple dies. In one example, a non-volatile storage device includes a first die including a 3D array of non-volatile ...
to establish electrical connections between active IC devices on the first and second wafers and to provide metal bonding between the adjacent first and second wafers, when the first wafer is pressed against the second wafer using a flexible bladder press to account for height differences of the ...