A 112 Gb/s PAM-4 56 Gb/s NRZ Reconfigurable Transmitter With Three-Tap FFE in 10-nm FinFET Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS... J Kim,A Balankutty,RK Dokania,... - IEEE 被引量...
A 128-Gb/s 1.3-pJ/b PAM-4 Transmitter with Reconfigurable 3-Tap FFE in 14-nm CMOS for IEEE JSSC by Zeynep Toprak-Deniz et al.
To achieve high-speed data transmission, several bandwidth-extended techniques were introduced, and an optimized output driver with a 3-tap feed-forward equalizer (FFE) was proposed to accomplish high-quality data transmission and equalization. The TX prototype was fabricated in a 28-nm CMOS ...
9afb124a5cb7177f53928fdaaf14c06ffec2db8daadba351f04214297ae43ccd +0.06427952BTC $ 4 837.97 2024-10-0810:27:36 29days14hoursago 864733 rbfsegwitFee:0.00021888BTC9.71s/vByte 9134cbc95fecd0c44317cc905708f49e56adf59cca4b117d1a185fbec22b14aa ...
A 0.88pJ/bit 112Gb/s PAM4 transmitter is reported in 7nm FinFET CMOS with 1V ppd output amplitude. The quarter-rate TX architecture implements a 5-tap analog FFE using tap extension circuitry, which permits higher FFE tap count than conventional quarter-rate architectures without requiring compl...
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MULTI-TAP 专利名称：MULTI-TAP 发明人：WADA TETSUYA,和田 哲也 申请号：JP2004362485 申请日：20041215 公开号：JP2006172846A 公开日：20060629 专利内容由知识产权出版社提供 专利附图：摘要：Array 申请人：SEIWA DENKO KK,正和電工株式会社地址：京都府宇治市木幡東中二三番地 ...
CC0603MRX5R5BB226 贴片电容 22μF(226) 0603 ±20% 6.3V X5R ¥ 0.24 UMH2N-TN 数字三极管 SOT-363 ¥ 0.16 ATA663254-GAQW 电子元器件 MICROCHIP 批次22+ ¥ 6.22 CC0805CRNPO9BN4R7 贴片电容 4.7pF(4R7) 0805 ±0.25pF 50V C0G/NP0 ¥ 0.10 0805W8F3571T5E 贴片电阻 3.57kΩ(3571...
2012. A Comparative Study of Common Mistakes in Using Pronouns of The Eighth Grade Students of SMPN 1 and MTsN Binuang Tapin Regency in Academic Year of 2011/2012. Thesis. English Education Department, Tarbiyah Faculty. Advisors: (I) Dr. Dina Hermina, M. Pd, (II) Raida Asfihana, M...