部件名2SA1941 下载2SA1941下载 文件大小163.38 Kbytes 页4 Pages 制造商TOSHIBA [Toshiba Semiconductor] 网页http://www.semicon.toshiba.co.jp/eng 标志 功能描述PowerAmplifierApplications4 Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) ...
ManufacturerPart #DatasheetDescription Toshiba Semiconductor2SA1941 147Kb/2PTRANSISTOR (POWER AMPLIFIER APPLICATIONS) 2SA1941 1Mb/73PBipolar Small-Signal Transistors 2SA1941 130Kb/4PPower Amplifier Applications Savantic, Inc.2SA1941 181Kb/4PSilicon PNP Power Transistors ...
部件名2SA1941 下载2SA1941下载 文件大小157.75 Kbytes 页3 Pages 制造商ISC [Inchange Semiconductor Company Limited] 网页http://www.iscsemi.cn 标志 功能描述iscSiliconPNPPowerTransistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)=- 2.0V(Min) @IC=- 7A ...
: http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 类似零件编号 - 2SA1941 制造商部件名数据表功能描述 Toshiba Semiconductor2SA1941 147Kb/2PTRANSISTOR (POWER AMPLIFIER APPLICATIONS) Foshan Blue Rocket Elec...2SA1941 938Kb/6PSilicon PNP transistor in a TO-3P Plastic Package. ...
部件名2SA1941 下载2SA1941下载 文件大小235.79 Kbytes 页5 Pages 制造商JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.] 网页http://www.hwdz.com.cn 标志 功能描述PowerAmplifierApplications FEATURES ● High collector voltage˖ VCEO=140V (min)
2SA1941的Datasheet、參數、電路圖、封裝、引腳圖、PDF資料 2SA1941中文資料 功能介紹 中文 : 功能介紹 英文 :Silicon PNP Power Transistors 生產廠商 :Quanzhou Jinmei Electronic Co.,Ltd. 封裝形式 : 引腳: Datasheet PDF 功能介紹 中文 : 功能介紹 英文 :Silicon PNP Power Transistors ...
2SA1941 Datasheet PDF (4 Pages) 1 Application Area 2 Electrical Specification 3 4 Application Area Click page to view datasheet detailClick reload to fix error page >2SA1941 Documents 2SA1941 Datasheet PDF Toshiba 4 Pages, 153 KB 2SA1941 Other Datasheet Toshiba 3 Pages, ...
上一页 下一页 / 4 演示模式打开当前在看 缩小 放大 自动缩放实际大小适合页面适合页宽50%75%100%125%150%200%300%400% JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 ...
2SA1941 Datasheet (PDF) ..1. Size:157K toshiba 2sa1941.pdf 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio ...
制造商 : Toshiba Semiconductor 封装/规格 : TO-3P 产品分类 : Bipolar Transistors / IGBTs ; Bipolar Transistors Datasheet: 2SA1941-0 Datasheet (PDF) RoHs Status: Lead free / RoHS Compliant 库存: 208 Share: Pinterest LinkedIn WhatsApp Facebook Line X 分享 对比产品 数量 加入BOM 询价 ...