2N7002K和2N7002KT1G的区别:2N7002K TO-236-3 N-Channel;2N7002KT1G SOT-23-3 N-Channel 60V 380mA。2N7002K和2N7002KT1G哪个好:2N7002K FAIRCHILD SEMICONDUCTOR 2N7002K 晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V;2N7002KT1G ON SEMICONDUCTOR 2N7002KT1G. 场效应管, MOSFET, N...
2N7002代替型号比较 2N7002 与2N7002KT1G 区别 隐藏相同项 高亮不同项 2N7002 ON Semiconductor VS 2N7002KT1G ON Semiconductor 型号 2N7002 2N7002KT1G 唯样编号 A32-2N7002 A3-2N7002KT1G 制造商 ON Semiconductor ON Semiconductor 供应商 唯样自营 唯样自营 分类 小信号MOSFET 小信号MOSFET ...
描述 数据表 2N7002K-T1-GE3.pdf 2N7002KT1G.PDF RoHs无铅/符合RoHs无铅/符合RoHs 规格信息 宽度1.60mm- Rds On(Max)@Id,Vgs2Ω1.6Ω@500mA,10V Qg-栅极电荷0.4nC- 栅极电压Vgs1V±20V 正向跨导 - 最小值100mS- 封装/外壳SOT-23SOT-23 工作温度-55°C~150°C(TJ)-55°C~150°C(TJ) ...
描述 数据表 2N7002K-T1-GE3.pdf 2N7002KT1G.PDF RoHs无铅/符合RoHs无铅/符合RoHs 规格信息 宽度1.60mm- Rds On(Max)@Id,Vgs2Ω1.6Ω@500mA,10V Qg-栅极电荷0.4nC- 栅极电压Vgs1V±20V 正向跨导 - 最小值100mS- 封装/外壳SOT-23SOT-23 工作温度-55°C~150°C(TJ)-55°C~150°C(TJ) ...
2V7002KT1G.pdf 2N7002KT1G.PDF RoHs无铅/符合RoHs无铅/符合RoHs 规格信息 Rds On(Max)@Id,Vgs-1.6Ω@500mA,10V 漏源极电压Vds-60V Pd-功率耗散(Max)-350mW(Ta) 栅极电压Vgs-±20V FET类型-N-Channel 封装/外壳TO-236-3,SC-59,SOT-23-3SOT-23 ...
2N7002-7-F.pdf RoHs无铅/符合RoHs无铅/符合RoHs 规格信息 Rds On(Max)@Id,Vgs1.6Ω@500mA,10V7.5Ω@50mA,5V 漏源极电压Vds60V60V Pd-功率耗散(Max)350mW(Ta)370mW 栅极电压Vgs±20V±20V FET类型N-ChannelN-Channel 封装/外壳SOT-23SOT-23 ...
描述 数据表 2N7002K-T1-GE3.pdf 2N7002KT1G.PDF RoHs无铅/符合RoHs无铅/符合RoHs 规格信息 宽度1.60mm- Rds On(Max)@Id,Vgs2Ω1.6Ω@500mA,10V Qg-栅极电荷0.4nC- 栅极电压Vgs1V±20V 正向跨导 - 最小值100mS- 封装/外壳SOT-23SOT-23 工作温度-55°C~150°C(TJ)-55°C~150°C(TJ) ...
Vishay 型号2N7002E-T1-E32N7002KT1G 唯样编号A36-2N7002E-T1-E3A3-2N7002KT1G 制造商VishayON Semiconductor 供应商唯样自营唯样自营 分类小信号MOSFET小信号MOSFET 描述2N7002E Series N-Channel 60 V 3 Ohms Surface Mount Power Mosfet - SOT-23 ...