2N7002-01 规格参数 生命周期:Active包装说明:PLASTIC PACKAGE-3 Reach Compliance Code:compliantECCN代码:EAR99 HTS代码:8541.21.00.95风险等级:5.82 配置:SINGLE最小漏源击穿电压:60 V 最大漏极电流 (Abs) (ID):0.115 A最大漏极电流 (ID):0.115 A ...
2N7002SOt-23规格书 2N7002 MOSFET (N-Channel)FEATURES z High density cell design for low R DS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability M arking: 702 ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ...
MEMORY存储芯片2N7002中文规格书
2N7002DW INFINEON 英飞凌芯片 中文版规格书.pdf,2N7002DW ™ OptiMOS Small-Signal-Transistor Product Summary Features VDS 60 V • Dual N-channel • Enhancement mode RDS(on),max VGS=10 V 3 W • Logic level VGS=4.5 V 4 • Avalanche rated ID 0.3 A
MOS管2N7002 60VN沟道场效应管 7002中文规格书 MOS管2N7002的引脚图: MOS管2N7002的极限值(如无特殊要求,TA=25℃): 漏极-源极电压 VDS:60V 漏极电流-连续 ID:115mA 功耗PD:225mW 结温TJ:150℃ 存储温度 Tstg:-55~150℃ MOS管2N7002的电特性(如无特殊要求,TA=25℃): ...
概述 规格参数 数据手册 如果您发现信息不准确,欢迎纠错 2N7002-7 概述 N-CHANNEL ENHANCEMENT MODE MOSFET N沟道增强型MOSFET 小信号场效应晶体管 2N7002-7 规格参数 是否Rohs认证: 不符合 生命周期: Obsolete 包装说明: SMALL OUTLINE, R-PDSO-G3 针数: 3 Reach Compliance Code: not_compliant ECCN代码: ...
2N7002DW;中文规格书,Datasheet资料 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor 2N7002DW Rev. A 1 1 Marking : 2N 1
2N7002BK,215;中文规格书,Datasheet资料
2N7002-215;中文规格书-Datasheet资料.pdf,2N7002 3 2 T O S 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic p
2N7002DW;中文规格书,Datasheet资料.pdf,2 N 7 0 0 2 October 2007 D W — 2N7002DW N-Channel Enhancement Mode Field Effect Transistor N - C h a n Features n e • Dual N-Channel MOSFET l E • Low On-Resistance • Low Gate Threshold Voltage n h a • Lo