MoTe2二碲化钼;MoTe2晶体2H 半导体相 晶体大小:可定制 晶体种类:Magnetic semiconductor,红外半导体,拓扑材料,热电材料 表征方法:EDS,SEM,Raman 规格:注:可按客户需求定制相应的方向和尺寸。 包装:超净袋真空包装 传导类型:N型;半绝缘型 晶体生长方式: CVT 化学气相传输法 ...
2D MoTe2 and WTe2 among TMDs are considered as possible candidates for high-performance near-infrared photodetector, due to its relatively low band gap energy (0.8-1.1 eV). Herein, 2D MoTe2 was selected for the development of high-performance visible-near-infrared (0.5-1.1 mu m) ...
For example, the WTe2 plasmon peak becomes much sharper at cryogenic temperatures11. However, the plasmon of 2H-TaSe2 exhibits anomalous temperature dependence. As shown in Fig. 4a and b, the TaSe2 plasmon peak (sample T4, W = 700 nm, d = 20 nm) firstly becomes sharper ...
Our results are summarized in Fig.2, where we plot the layer thickness,hand the binding energy,Eb, as a function of the interlayer distance,d. The various compounds are color-coded differently depending on the corresponding chalcogen or halide element, since these form the most external atomic ...
1T′ and 2H phase MoTe2 films were verified by Raman spectra and scanning transmission electron microscopy. A fabricated 2H-MoTe2-based field-effect transistor (FET) was found to have p-type electrical transport with a mobility of 22.8cm2/V·s—the fastest among all currently reported 2H ...