However, the controllable p-type doping of low-dimensional semiconductors such as two-dimensional (2D) transition-metal dichalcogenides (TMDs) has proved to be challenging. Although it is possible to achieve high-quality, low-resistance n-type van der Waals (vdW) contacts on 2D TMDs1,2,3,4,...
2H TMDs are the main part of 2D semiconductors, which are direct bandgaps at the monolayer. But with the increase of layers, the bandgap of TMDs gradually decreases and changes from direct bandgap to indirect bandgap varying from 1.1 to 2.1 eV. The uniform atomic thickness and the ...
The WSe2/MoS2 PN diode shows excellent performance with an ideality factor of 1.5 and a high rectification (ON/OFF) ratio of over 10. This PN diode exhibits spectral photo-responses from the ultraviolet (405 nm) region to the near infrared (808 nm) region with obvious photovoltaic behaviors...
The atomically thin monolayer and few layers of transition metal dichalcogenides (TMDs) could be written as MX2 where M refers to transition metal atom, such as molybdenum (Mo), tungsten (W), platinum (Pt), and palladium (Pd), while X is the chalcogen atom, such as sulfur (S), selenium...
2D materials, such as graphene, black phosphorus and transition-metal-dichalcogenides (TMDs), all have demonstrated good electrical properties with a very thin thickness. The graphene transistor is the first demonstrated 2D transistor and shows very high mobility but a limited on/off current ratio ...
and mechanical properties of materials, flexible device configurations, and their performance in transistors, sensors, and photodetectors are thoroughly discussed. At last, some perspectives are given on the open challenges and prospects for 2D TMDs flexible electronic devices and new device opportunities....
The 2D semiconducting TMDs, such as MoS2, were first used to fabricate field effect transistors in 2011 and attracted lots of research interests because they possess a band gap [66]. The excellent mechanical properties of 2D TMDs, which fracture strains as high as 11% [67], make them promis...
explored the effectiveness of TMDs to enhance all-optical modulation in the THz regime. They took advantage of the tuneable transmission properties of the WSe2-silicon hybrid structure, and the results showed an 87% modulation depth with the enhanced photo-doping capabilities. This is 40% higher ...
(see details in Supplementary Figs.7–9). The formation of the out-of-plane PN junction serves as a novel sensitizing mechanism for 2D-TMDs phototransistors and paves the way towards the use of the concept in other 2D semiconductors or in combination of those to facilitate sensitization, ...
(M Squared SolsTiS). The laser was focused to a diffraction limited spot on the input grating coupler. Light scattered from the output grating coupler was isolated using a spatial filter and measured with a silicon photodiode. In the linear transmission measurements, the probe laser was modulated...